Semiconductor storage device and memory system

ABSTRACT

According to one embodiment, a semiconductor storage device includes a first memory cell capable of storing n-bit data (n is a natural number not less than 4). When receiving first data, including first and second bits of the n-bit data, from a controller, the semiconductor storage device writes the received first data to the first memory cell. After receiving the first data, when the semiconductor storage device receives second data including third and fourth bits of the n-bit data, the semiconductor storage device reads the first and second bits from the first memory cell and writes the n-bit data to the first memory cell based on the read first and second bits and the received second data.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.15/459,542, filed Mar. 15, 2017, which claims the benefit of U.S.Provisional Application No. 62/393,744, filed Sep. 13, 2016, the entirecontents of each of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor storagedevice and a memory system.

BACKGROUND

A NAND flash memory is widespread as a data storage device.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a memory system according to a firstembodiment;

FIG. 2 is a circuit diagram of a memory cell array and a sense amplifiermodule of a semiconductor storage device according to the firstembodiment;

FIGS. 3 and 4 are views showing data, a threshold distribution, and aread level that can be taken by a memory cell according to the firstembodiment;

FIG. 5 is a flowchart of a write operation in the memory systemaccording to the first embodiment;

FIG. 6 is a schematic view showing data held by a controller and a senseamplifier in each step during the write operation in the memory systemaccording to the first embodiment;

FIG. 7 is a flowchart showing a write data processing method during thewrite operation in the controller according to the first embodiment;

FIG. 8 is a graph for explaining write data code conversion during thewrite operation in the controller according to the first embodiment;

FIGS. 9 and 10 are views showing a change in threshold distribution inthe write operation in the semiconductor storage device according to thefirst embodiment;

FIG. 11 is a command sequence of the write operation in the memorysystem according to the first embodiment;

FIG. 12 is a command sequence and a waveform diagram of the writeoperation in the semiconductor storage device according to the firstembodiment;

FIG. 13 is a flowchart of a read operation in the memory systemaccording to the first embodiment;

FIG. 14 is a view showing a waveform and a data output timing in theread operation in the semiconductor storage device according to thefirst embodiment;

FIG. 15 is a block diagram of a memory system according to a secondembodiment;

FIG. 16 is a flowchart of a write operation in the memory systemaccording to the second embodiment;

FIG. 17 is a schematic view showing data retained by a controller and asense amplifier in each step during the write operation in the memorysystem according to the second embodiment;

FIG. 18 is a graph for explaining write data code conversion during thewrite operation in the controller according to the second embodiment;

FIGS. 19 and 20 are views showing a change in threshold distribution inthe write operation in the semiconductor storage device according to thesecond embodiment;

FIG. 21 is a command sequence of the write operation in the memorysystem according to the second embodiment;

FIG. 22 is a waveform diagram of the write operation in thesemiconductor storage device according to the second embodiment;

FIG. 23 is a flowchart of a write operation in a memory system accordingto a third embodiment;

FIG. 24 is a schematic view showing data retained by a controller and asense amplifier in each step during the write operation in the memorysystem according to the third embodiment;

FIGS. 25 and 26 are views showing a change in threshold distribution inthe write operation in the semiconductor storage device according to thethird embodiment;

FIG. 27 is a command sequence of the write operation in the memorysystem according to the third embodiment;

FIG. 28 is a command sequence of a write operation in a memory systemaccording to a fourth embodiment;

FIG. 29 is a schematic view showing data retained by a controller and asense amplifier in each step during the write operation in the memorysystem according to the fourth embodiment;

FIGS. 30 and 31 are views showing a change in threshold distribution inthe write operation in a semiconductor storage device according to thefourth embodiment; and

FIG. 32 is a command sequence of the write operation in the memorysystem according to the fourth embodiment.

FIG. 33 is a block diagram of a RAM of a controller according to a fifthembodiment;

FIG. 34 is a circuit diagram of a memory cell array of a semiconductorstorage device according to the fifth embodiment;

FIG. 35 is a flow chart of a program operation in a memory systemaccording to the fifth embodiment;

FIGS. 36 and 37 are views showing a change in threshold distribution ina program operation in the semiconductor storage device according to thefifth embodiment;

FIG. 38 is a view showing a writing order in the program operation inthe memory system according to the fifth embodiment;

FIGS. 39 and 40 are command sequences of the program operation in thememory system according to the fifth embodiment;

FIG. 41 is a command sequence and a waveform chart of the programoperation in the semiconductor storage device according to the fifthembodiment;

FIG. 42 is a command sequence of the program operation in the memorysystem according to the fifth embodiment;

FIG. 43 is a view showing a writing order in a program operation in amemory system according to a comparative example of the fifthembodiment;

FIG. 44 is a view for comparing a storage capacity of RAM between acontroller according to the fifth embodiment and a controller accordingto the comparative example;

FIG. 45 is a view showing the writing order in the program operation inthe memory system according to a variation of the fifth embodiment;

FIG. 46 is a view showing a writing order in a program operation in amemory system according to a sixth embodiment;

FIG. 47 is a command sequence of the program operation in the memorysystem according to the sixth embodiment;

FIG. 48 is a view showing a writing order in a program operation in amemory system according to a comparative example of the sixthembodiment;

FIG. 49 is a view for comparing the storage capacity of RAM between acontroller according to the sixth embodiment and a controller accordingto the comparative example;

FIG. 50 is a view showing the writing order in the program operation inthe memory system according to a variation of the sixth embodiment; and

FIGS. 51 and 52 are views showing a change in threshold distribution ina program operation in a semiconductor storage device according to aseventh embodiment.

DETAILED DESCRIPTION

In general, according to one embodiment, a semiconductor storage deviceincludes a first memory cell capable of storing n-bit data (n is anatural number not less than 4). When receiving first data, includingfirst and second bits of the n-bit data, from a controller, thesemiconductor storage device writes the received first data to the firstmemory cell. After receiving the first data, when the semiconductorstorage device receives second data including third and fourth bits ofthe n-bit data, the semiconductor storage device reads the first andsecond bits from the first memory cell and writes the n-bit data to thefirst memory cell based on the read first and second bits and thereceived second data.

Hereinafter, embodiments will be described with reference to thedrawings. The drawings are schematic. The embodiments to be describedbelow exemplify devices and methods for embodying the technical conceptsof the embodiments.

In the following explanation, the same reference numerals denoteconstituent elements having almost the same functions and arrangements.A number just after a letter constituting a reference numeral isreferred to by the reference numeral containing the same letter and isused for distinguishing the components having a similar configuration.When the components indicated by the reference numerals containing thesame letter do not need to be distinguished from each other, thecomponents are referred to by the reference numeral containing only aletter.

[1] First Embodiment

A semiconductor storage device and a memory system according to a firstembodiment will be described.

[1-1] Configuration

[1-1-1] Configuration of Memory System 1

A configuration of a memory system 1 will be described using FIG. 1.FIG. 1 is a block diagram of the memory system 1. As shown in FIG. 1,the memory system 1 includes a semiconductor storage device 10 and acontroller 20, and is connected to an external host apparatus 30.

The semiconductor storage device 10 is a NAND-type flash memory whichnonvolatilely stores data. A configuration of the semiconductor storagedevice 10 will be described later.

The controller 20 issues commands for reading, writing, erasing or thelike to the semiconductor storage device 10, in response to aninstruction from the host apparatus 30. As shown in FIG. 1, thecontroller 20 includes a host interface circuit 21, a built-in memory(RAM) 22, a processor (CPU) 23, a buffer memory 24, an ECC circuit 25,and a NAND interface circuit 26.

The host interface circuit 21 is connected to the host apparatus 30through a host bus and communicates with the host apparatus 30. Forexample, the host interface circuit 21 transfers an instruction anddata, received from the host apparatus 30, respectively to the processor23 and the buffer memory 24. The host interface circuit 21 furthertransfers data in the buffer memory 24 to the host apparatus 30, inresponse to an instruction from the processor 23.

The RAM 22 is a semiconductor memory such as DRAM, and retains firmwarefor management of the semiconductor storage device 10, variousmanagement tables, or the like. The RAM 22 is used as a work area of theprocessor 23 and, for example, includes regions PG0 to PG5 used during awrite operation. The regions PG each can hold 1 page data. Thedefinition of the “page” will be described later.

The CPU 23 controls the overall operation of the controller 20. Forexample, the CPU 23 issues a write command to the NAND interface circuit26, in response to a write instruction received from the host apparatus30. This operation is similar for reading and erasing. Further, the CPU23 executes various processes for managing a memory space of thesemiconductor storage device 10, such as wear leveling.

The buffer memory 24 temporarily retains read data, received by thecontroller 20 from the semiconductor storage device 10, write data,received from the host apparatus 30, and so on.

The ECC circuit 25 executes a data error checking and correcting (ECC)process. Specifically, the ECC circuit 25 generates parity bits, basedon write data during data writing. Then, the ECC circuit 25 generatessyndrome bits from the parity bits during data reading, to detect anerror, and thus to correct the detected error.

The NAND interface circuit 26 is connected to the semiconductor storagedevice 10 through a NAND bus and communicates with the semiconductorstorage device 10. A signal is transmitted or received between thesemiconductor storage device 10 and the controller 20 in accordance withthe NAND interface. For example, the NAND interface circuit 26 transmitsa command latch enable signal CLE, an address latch enable signal ALE, awrite enable signal WEn, and a read enable signal REn to thesemiconductor storage device 10, receives a ready/busy signal RBn fromthe semiconductor storage device 10, and transmits or receives aninput/output signal I/O to or from the semiconductor storage device 10.

The signals CLE and ALE indicate the fact that the input signals I/Otransmitted to the semiconductor storage device 10 are a command CMD andaddress information ADD to the semiconductor storage device 10. Thesignal WEn is asserted with an “L” level and allows the semiconductorstorage device 10 to take the input signal I/O. The signal REn isasserted with the “L” level and a signal for reading the output signalI/O from the semiconductor storage device 10.

The ready/busy signal RBn indicates whether the semiconductor storagedevice 10 can receive an instruction from the controller 20. Theready/busy signal RBn is set to an “H” level, for example when thesemiconductor storage device 10 is in a ready state in which thesemiconductor storage device 10 can receive the instruction from thecontroller 20, and the ready/busy signal RBn is set to the “L” levelwhen the semiconductor storage device 10 is in a busy state in which thesemiconductor storage device 10 cannot receive the instruction.

The input/output signal I/O is a signal of 8 bits, for example, andcorresponds to the command CMD, the address information ADD, data DAT,and the like. For example, during a write operation, the input/outputsignal I/O transferred to the semiconductor storage device 10 includes awrite command CMD issued by the CPU 23 and write data DAT in the buffermemory 24. On the other hand, during a read operation, the input/outputsignal I/O transferred to the semiconductor storage device 10 includes aread command, and the input/output signal I/O transferred to thecontroller 20 includes read data DAT.

Examples of the host apparatus 30 using the memory system 1 describedabove include a digital camera and a personal computer.

A semiconductor device may be constituted by combining the semiconductorstorage device 10 and the controller 20, for example. Examples of such asemiconductor device include a memory card, such as SD™ card, and SSD(solid state drive).

[1-1-2] Configuration of Semiconductor Storage Device 10

Next, a configuration of the semiconductor storage device 10 will bedescribed continuously using FIG. 1. As shown in FIG. 1, thesemiconductor storage device 10 includes a memory cell array 11, acommand register 12, an address register 13, a sequencer 14, a drivercircuit 15, a row decoder 16, and a sense amplifier module 17.

The memory cell array 11 includes blocks BLK0 to BLKn (n is an integerof 1 or more). The block BLK is a collection of a plurality ofnonvolatile memory cells associated with a bit line and a word line, andis, for example, a data erase unit. The present embodiment will bedescribed, taking as an example a case where memory cells are arrayedtwo-dimensionally on a semiconductor substrate.

The command register 12 retains the command CMD received from thecontroller 20. The address register 13 retains address information ADDreceived from the controller 20. The address information ADD includes apage address PA and a block address BA.

The sequencer 14 controls the overall operation of the semiconductorstorage device 10, based on the command CMD retained by the commandregister 12. Specifically, the sequencer 14 controls the driver circuit15, the row decoder 16, the sense amplifier module 17, and so on, basedon the command CMD, and executes a write operation, a read operation, orthe like.

The driver circuit 15 generates a desired voltage, based on aninstruction from the sequencer 14. Further, the driver circuit 15supplies the generated voltage to the row decoder 16, based on the pageaddress PA retained by the address register 13.

The row decoder 16 selects any one of the blocks BLK0 to BLKn, based onthe block address BA retained by the address register 13. Further, therow decoder 16 selects a row direction in the selected block BLK, andapplies the voltage, supplied from the driver circuit 15, to a selectedword line.

The sense amplifier module 17 outputs the data DAT, read from the memorycell array 11, to the controller 20. Further, the sense amplifier module17 transfers the write data DAT, received from the controller 20, to thememory cell array 11.

[1-1-3] Configuration of Memory Cell Array 11

A configuration of the memory cell array 11 will be described using FIG.2. FIG. 2 is a circuit diagram of the memory cell array 11 and the senseamplifier module 17, and shows a detailed circuit configurationregarding the block BLK in the memory cell array 11. As shown in FIG. 2,the block BLK includes a plurality of NAND strings 18.

The NAND strings 18 are provided corresponding to the bit lines BL0 toBL(m−1) ((m−1) is an integer of 1 or more), and, for example, the NANDstring 18 includes eight memory cell transistors (MT0 to MT7) and selecttransistors ST1 and ST2. The number of the memory cell transistors MTincluded in the NAND string 18 is not limited thereto and, there may bean arbitrary number of memory cell transistors MT.

The memory cell transistor MT includes a control gate and a chargeaccumulation layer, and nonvolatilely retains data. The memory celltransistors MT0 to MT7 are connected in series between a source of theselect transistor ST1 and a drain of the select transistor ST2. Gates ofthe select transistors ST1 and ST2 in the same block BLK are commonlyconnected to select gate lines SGD and SGS, respectively. Similarly,control gates of the memory cell transistors MT0 to MT7 in the sameblock BLK are commonly connected to word lines WL0 to WL7, respectively.

In the memory cell array 11, drains of the select transistors ST1 in theNAND strings NS on the same column are commonly connected to the bitline BL. Namely, the bit line BL commonly connects the NAND strings NSon the same column between the blocks BLK. Sources of the selecttransistors ST2 are commonly connected to a source line SL.

In the above constitution, a collection of 1-bit data retained by thememory cell transistors MT connected to the common word line WL isreferred to as a “page”. Accordingly, when 4-bit data is stored in thememory cell transistor MT, data corresponding to four pages is stored ina collection of memory cells connected to the word line WL.

In the present embodiment, the single memory cell transistor MT canretain 4-bit data. The 4-bit data are referred to as a lower bit, amiddle bit, an upper bit, and a top bit in order from lower bits. Acollection of lower bits retained by the memory cell transistors MTconnected to the same word line WL is referred to as a “lower page”, anda collection of middle bits is referred to as a “middle page”, acollection of upper bits is referred to as an “upper page”, and acollection of top bits is referred to as a “top page”. Namely, in thisexample, four pages are assigned to the single word line WL, so that theblock BLK including eight word lines WL has a capacity corresponding to32 pages.

[1-1-4] Configuration of Sense Amplifier Module 17

Next, a configuration of the sense amplifier module 17 will be describedcontinuously using FIG. 2. As shown in FIG. 3, the sense amplifiermodule 17 includes sense amplifier units SAU (SAU0 to SAU (m−1))provided for each of the bit lines BL.

The sense amplifier units SAU each include a sense amplifier part SA,latch circuits ADL, BDL, CDL, DDL, and XDL, and an operation part OP.The sense amplifier part SA, the latch circuits ADL, BDL, CDL, DDL, andXDL, and the operation part OP are connected so as to be able totransmit and receive data to and from each other.

The sense amplifier part SA senses read data on the corresponding bitline BL during a read operation, and determines whether the read data is“0” or “1”. Further, the sense amplifier part SA applies a voltage tothe bit line BL during a write operation, based on write data.

The latch circuits ADL, BDL, CDL, and DDL temporarily retain read dataand write data. The read data determined by the sense amplifier part SAduring the read operation and the write data transferred to the latchcircuit XDL during the write operation are transferred to any of thelatch circuits ADL, BDL, CDL, and DDL, for example.

The operation part OP performs various operations, such as logical sum(OR) operation, logical product (AND) operation, and exclusive logicalsum (XOR) operation, with respect to data retained in the latch circuitsADL, BDL, CDL, and DDL.

The latch circuit XDL is used in input and output of data between thesense amplifier SAU and the controller 20. For example, the datareceived from the controller 20 is transferred to the latch circuit ADL,BDL, CDL, or DDL or the sense amplifier part SA through the latchcircuit XDL. Similarly, data retained by the latch circuit ADL, BDL,CDL, or DDL or the sense amplifier part SA is transferred to thecontroller 20 through the latch circuit XDL.

The latch circuit XDL functions as a cache memory of the semiconductorstorage device 10. For example, even if the latch circuits ADL, BDL,CDL, and DDL are being used, the semiconductor storage device 10 can beheld in the ready state if the latch circuit XDL is not used.

The configuration of the sense amplifier module 17 is not limitedthereto and may be variously changed. For example, the sense amplifierunit SAU may be provided with six or more latch circuits.

[1-1-5] Threshold Distribution of Memory Cell Transistor MT

Next, a threshold distribution of the memory cell transistor MT will bedescribed using FIG. 3. FIG. 3 shows data, the threshold distribution,and a voltage used during a read operation that can be taken by each ofthe memory cell transistors MT.

As shown in FIG. 3, when the memory cell transistor MT retains 4 bitdata, a distribution of a threshold voltage thereof is divided into 16segments. The 16 threshold distributions are referred to as a “0” level,a “1” level, a “2” level, a “3” level, a “4” level, a “5” level, a “6”level, a “7” level, an “8” level, a “9” level, an “A” level, a “B”level, a “C” level, a “D” level, an “E” level, and an “F” level in theascending order of threshold voltages.

Voltages V1, V2, V3, V4, V5, V6, V7, V8, V9, VA, VB, VC, VD, VE, and VFshown in FIG. 3 are used for verification of the “0” level, the “1”level, the “2” level, the “3” level, the “4” level, the “5” level, the“6” level, the “7” level, the “8” level, the “9” level, the “A” level,the “B” level, the “C” level, the “D” level, the “E” level, and the “F”level, respectively, during a write operation. A voltage VREAD isapplied to a unselected word line during a read operation. When thevoltage VREAD is applied to the gate of the memory cell transistor MT,the memory cell transistor MT is retained in an on state regardless ofretained data. A relationship of those voltage values isV1<V2<V3<V4<V5<V6<V7<V8<V9<VA<VB<VC<VD<VE<VF<VREAD.

The “0” level of the above threshold distributions corresponds to anerase state of the memory cell transistor MT. A threshold voltage at the“0” level is less than the voltage V1. A threshold voltage at the “1”level is not less than the voltage V1 and less than the voltage V2. Athreshold voltage at the “2” level is not less than the voltage V2 andless than the voltage V3. A threshold voltage at the “3” level is notless than the voltage V3 and less than the voltage V4. A thresholdvoltage at the “4” level is not less than the voltage V4 and less thanthe voltage V5. A threshold voltage at the “5” level is not less thanthe voltage V5 and less than the voltage V6. A threshold voltage at the“6” level is not less than the voltage V6 and less than the voltage V7.A threshold voltage at the “7” level is not less than the voltage V7 andless than the voltage V8. A threshold voltage at the “8” level is notless than the voltage V8 and less than the voltage V9. A thresholdvoltage at the “9” level is not less than the voltage V9 and less thanthe voltage VA. A threshold voltage at the “A” level is not less thanthe voltage VA and less than the voltage VB. A threshold voltage at the“B” level is not less than the voltage VB and less than the voltage VC.A threshold voltage at the “C” level is not less than the voltage VC andless than the voltage VD. A threshold voltage at the “D” level is notless than the voltage VD and less than the voltage VE. A thresholdvoltage at the “E” level is not less than the voltage VE and less thanthe voltage VF. A threshold voltage at the “F” level is not less thanthe voltage VE and less than the voltage VREAD.

In order to simplify the description, the read operation in this examplewill be described, taking as an example a case where a verify voltage isused as a read voltage. Hereinafter, read operations using the voltagesV1, V2, V3, V4, V5, V6, V7, V8, V9, VA, VB, VC, VD, VE, and VF arereferred to as read operations 1R, 2R, 3R, 4R, 5R, 6R, 7R, 8R, 9R, AR,BR, CR, DR, ER, and FR, respectively. The read operation 1R determineswhether or not the threshold voltage of the memory cell transistor MT isless than the voltage V1. The read operation 2R determines whether ornot the threshold voltage of the memory cell transistor MT is less thanthe voltage V2. The read operation 3R determines whether or not thethreshold voltage of the memory cell transistor MT is less than thevoltage V3. The same applies hereinafter.

The above 16 threshold distributions are formed by writing 4-bit(4-page) data constituted of a lower bit, an middle bit, a upper bit,and a top bit. The 16 threshold distributions correspond to 4 bit dataitems being different from each other. In the present embodiment, as isshown below, data is assigned to the memory cell transistor MT includedat each level.

The memory cell transistor MT included at the “0” level retains “1111”(“lower bit/middle bit/upper bit/top bit”) data. The memory celltransistor MT included at the “1” level retains “1110” data. The memorycell transistor MT included at the “2” level retains “1100” data. Thememory cell transistor MT included at the “3” level retains “1101” data.The memory cell transistor MT included at the “4” level retains “1001”data. The memory cell transistor MT included at the “5” level retains“1000” data. The memory cell transistor MT included at the “6” levelretains “1010” data. The memory cell transistor MT included at the “7”level retains “1011” data. The memory cell transistor MT included at the“8” level retains “0011” data. The memory cell transistor MT included atthe “9” level retains “0010” data. The memory cell transistor MTincluded at the “A” level retains “0000” data. The memory celltransistor MT included at the “B” level retains “0001” data. The memorycell transistor MT included at the “C” level retains “0101” data. Thememory cell transistor MT included at the “D” level retains “0100” data.The memory cell transistor MT included at the “E” level retains “0110”data. The memory cell transistor MT included at the “F” level retains“0111” data.

In order to determine a value of each bit in a read operation, the senseamplifier module 17 is required to check a voltage at a boundary atwhich a value changes in each bit. In the above data assignment, thelower bit is determined by the read operation 8R. The middle bit isdetermined by the read operations 4R and CR. The upper bit is determinedby the read operations 2R, 6R, AR, and ER. The top bit is determined bythe read operations 1R, 3R, 5R, 7R, 9R, BR, DR, and FR. Namely, thelower bit, the middle bit, the upper bit, and the top bit are determinedby one read operation, two read operations, four read operations, andeight read operations, respectively. Hereinafter, such data assignmentis referred to as “1-2-4-8 code”.

In the present embodiment, data assignment as shown in FIG. 4 is used,for example. In the example shown in FIG. 4, as is shown below, data isassigned to the memory cell transistor MT included at each level.

The memory cell transistor MT included at the “0” level retains “1111”data. The memory cell transistor MT included at the “1” level retains“0111” data. The memory cell transistor MT included at the “2” levelretains “0101” data. The memory cell transistor MT included at the “3”level retains “0001” data. The memory cell transistor MT included at the“4” level retains “1001” data. The memory cell transistor MT included atthe “5” level retains “1000” data. The memory cell transistor MTincluded at the “6” level retains “0000” data. The memory celltransistor MT included at the “7” level retains “0100” data. The memorycell transistor MT included at the “8” level retains “0110” data. Thememory cell transistor MT included at the “9” level retains “0010” data.The memory cell transistor MT included at the “A” level retains “0011”data. The memory cell transistor MT included at the “B” level retains“1011” data. The memory cell transistor MT included at the “C” levelretains “1010” data. The memory cell transistor MT included at the “D”level retains “1110” data. The memory cell transistor MT included at the“E” level retains “1100” data. The memory cell transistor MT included atthe “F” level retains “1101” data.

When data thus assigned is read, the lower bit is determined by the readoperations 1R, 4R, 6R, and BR. The middle bit is determined by the readoperations 3R, 7R, 9R, and DR. The upper bit is determined by the readoperations 2R, 8R, and ER. The top bit is determined by the readoperations 5R, AR, CR, and FR. Namely, the lower bit, the middle bit,the upper bit, and the top bit are determined by four read operations,four read operations, three read operations, and four read operations,respectively. Hereinafter, this data assignment is referred to as a“4-4-3-4 code”.

[1-2] Operation

Next, a write operation and a read operation in the memory system 1 willbe described.

[1-2-1] Write Operation of Memory System 1

<Regarding Flow of Write Operation>

Next, the write operation in the memory system 1 will be described. Inthe write operation in the memory system 1 according to the presentembodiment, the controller 20 applies various types of data processingto 4 pages of data received from the host apparatus 30, and this data isdivided twice to be transferred to the semiconductor storage device 10every two pages. The semiconductor storage device 10 then writes data ofevery two bits in the memory cell transistors MT, sharing the word lineWL, by two write operations.

Hereinafter, the details of the write operation in the memory system 1will be described using FIGS. 5 and 6. FIG. 5 shows a flow chart of thewrite operation in the memory system 1, and FIG. 6 shows an example ofdata retained by the RAM 22 and the sense amplifier unit SAU in eachstep shown in FIG. 5.

(Step S10)

First, the host apparatus 30 transmits write data to the controller 20.The controller 20 stores the received write data in the buffer memory24. When the write data stored in the buffer memory 24 reaches fourpages, the CPU 23 stores write data DAT0 of the four pages in eachregion PG of the RAM 22 in the unit of a page. For example, as shown inFIG. 6, lower page data of the data DAT0 is retained in the region PG0,middle page data of the data DAT0 is retained in the region PG1, upperpage data of the data DAT0 is retained in the region PG2, and top pagedata of the data DAT0 is retained in the region PG3.

(Step S11)

Next, the controller 20 applies data processing to the 4 page data DAT0retained in the RAM 22. FIG. 7 shows the details of the data processing.FIG. 7 shows a flow chart of the data processing executed by thecontroller 20 in the write operation.

As shown in FIG. 7, the CPU 23 first randomizes the 4 page data DAT,retained by the RAM 22, for each page (step S40). At this time, the4-4-3-4 code, for example, is applied to the randomized data. Then, theECC circuit 25 gives parity for each page to the 4 page data DATretained by the RAM 22 (step S41). Then, the CPU 23 applies codeconversion to the 4 page data DAT retained by the RAM 22 (step S42).

FIG. 8 shows the details of the code conversion in step S42. As shown inFIG. 8, in the present embodiment, code conversion from a 4-4-3-4 codeto the 1-2-4-8 code is executed. In the present embodiment, the lowerpage data after code conversion is referred to as first lower page dataML1, the middle page data after code conversion is referred to as firstupper page data MU1, the upper page data after code conversion isreferred to as second lower page data ML2, and the top page data aftercode conversion is referred to as second upper page data MU2.

As shown in FIG. 6, the first lower page data ML1 of the data DAT0 isretained in the region PG0, the first upper page data MU1 of the dataDAT0 is retained in the region PG1, the second lower page data ML2 ofthe data DAT0 is retained in the region PG2, and the second upper pagedata MU2 of the data DAT0 is retained in the region PG3.

(Step S12)

Next, the controller 20 issues a first command set and transmits thefirst command set to the semiconductor storage device 10. The firstcommand set includes a command instructing writing, the addressinformation ADD specifying the word line WL0, and the 2 page data DAT0.The 2 page data DAT0 of a command set received by the semiconductorstorage device 10 is transferred to the latch circuit of the senseamplifier unit SAU. Specifically, as shown in FIG. 6, the data itemsretained in the regions PG0 and PG1 of the RAM 22 are transferredrespectively to the latch circuits ADL and BDL of the sense amplifierunit SAU. Then, the regions PG0 and PG1 of the RAM 22 are cleared whenthe retained data items are transferred. Here, “clear” corresponds to anoperation in which data retained in a latch circuit is discarded.

(Step S13)

When the semiconductor storage device 10 receives the first command setfrom the controller 20, the semiconductor storage device 10 sets theready/busy signal RBn to the “L” level and executes the first writeoperation in which the word line WL0 is selected. FIG. 9 shows anoutline of the first write operation. FIG. 9 shows a change in thresholddistribution of the memory cell according to the first write operation.As shown in FIG. 9, in the first write operation, the semiconductorstorage device 10 executes a two-page write operation based on the firstlower page data ML1 and the first upper page data MU1 input from thecontroller 20.

The threshold voltage of the memory cell transistor MT before executionof the first write operation is distributed at an “ER” level. Thethreshold voltage at the “ER” level is less than the voltage V1, and asin the above “0” level, the threshold voltage at the “ER” levelcorresponds to the erase state of the memory cell transistor MT.

In the first write operation, the sequencer 14 uses voltages VM1, VM2,and VM3 as verify voltages. The voltage VM1 is used when “10” (“lowerbit/upper bit”) data is written, and the voltage VM1 is not less thanthe voltage V1 and less than the voltage V5. The voltage VM2 is a verifyvoltage used when “00” data is written, and the voltage VM2 is not lessthan the voltage V5 and less than the voltage V9. The voltage VM3 is averify voltage used when “01” data is written, and the voltage VM3 isnot less than the voltage V9 and less than the voltage VD.

When the first write operation is executed, the threshold voltage of thememory cell transistor MT increases based on data to be written, andfour threshold distributions are formed. An “M0” level shown in FIG. 9is formed by the memory cell transistors MT in which “11” data iswritten. An “M1” level is formed by the memory cell transistors MT inwhich “10” data is written. An “M2” level is formed by the memory celltransistors MT in which “00” data is written. An “M3” level is formed bythe memory cell transistors MT in which “01” data is written.

The threshold voltage at the “M0” level is less than the voltage V1, andas in the above “0” level and “ER” level, the threshold voltage at the“M0” level corresponds to the erase state of the memory cell transistorMT. Namely, in the first write operation, the increase in thresholdvoltage is suppressed in the memory cell transistor MT in which the “11”data is written. A threshold voltage at the “M1” level is not less thanthe voltage VM1 and less than the voltage V5. A threshold voltage at the“M2” level is not less than the voltage VM2 and less than the voltageV9. A threshold voltage at the “M3” level is not less than the voltageVM3 and less than the voltage VD.

As described above, the voltages VM1, VM2, and VM3 used in verificationin the first write operation are set such that the threshold voltage ofthe memory cell transistor MT having passed verification does not exceedthe voltages V5, V9 and VD, respectively.

(Step S14)

When the regions PG0 and PG1 of the RAM 22 are cleared while thesemiconductor storage device 10 executes the first write operation instep S13, the CPU 23 transfers 4 page data DAT1, received from the hostapparatus 30, from the buffer memory 24 to the RAM 22. For example, asshown in FIG. 6, lower page data of the data DAT1 is retained in theregion PG0, middle page data of the data DAT1 is retained in the regionPG1, upper page data of the data DAT1 is retained in the region PG4, andtop page data of the data DAT1 is retained in the region PG5.

(Step S15)

Next, the controller 20 applies data processing as in step S11 to the 4page data DAT1 retained in the RAM 22. When the data processing isexecuted, as shown in FIG. 6, the first lower page data ML1 of the dataDAT1 is retained in the region PG0, the first upper page data MU1 of thedata DAT1 is retained in the region PG1, the second lower page data ML2of the data DAT1 is retained in the region PG4, and the second upperpage data MU2 of the data DAT1 is retained in the region PG5.

(Step S16)

When the first write operation in step S13 is ended, the semiconductorstorage device 10 sets the ready/busy signal RBn to the “H” level andnotifies the controller 20 of the end of the write operation. Further,when the first write operation is ended, the latch circuit in the senseamplifier unit SAU is cleared as shown in FIG. 6.

(Step S17)

Next, the controller 20 issues the first command set and transmits thefirst command set to the semiconductor storage device 10. The firstcommand set includes the address information ADD specifying a word lineWL1 and the data DAT1 corresponding to two pages. The 2 page data DAT1of a command set received by the semiconductor storage device 10 istransferred to the latch circuit of the sense amplifier unit SAU.Specifically, as shown in FIG. 6, the data items retained in the regionsPG0 and PG1 of the RAM 22 are transferred respectively to the latchcircuits ADL and BDL of the sense amplifier unit SAU. Then, the regionsPG0 and PG1 of the RAM 22 are cleared when the retained data items aretransferred.

(Step S18)

When the semiconductor storage device 10 receives the first command setfrom the controller 20, the semiconductor storage device 10 sets theready/busy signal RBn to the “L” level and executes the first writeoperation in which the word line WL1 is selected. The first writeoperation is similar to step S13, whereby the 2 page data based on thefirst lower page data ML1 and the first upper page data MU1 of the dataDAT1 is written in the memory cell transistor MT connected to the wordline WL1.

(Step S19)

When the first write operation in step S18 is ended, the semiconductorstorage device 10 sets the ready/busy signal RBn to the “H” level andnotifies the controller 20 of the end of the write operation. Further,when the first write operation is ended, the latch circuit in the senseamplifier unit SAU is cleared as shown in FIG. 6.

(Step S20)

When the first write operation with respect to the word line WL0 and thefirst write operation with respect to the word line WL1 are ended, thecontroller 20 issues a second command set and transmits the secondcommand set to the semiconductor storage device 10. The second commandset includes a command instructing writing, the address information ADDspecifying the word line WL0, and the 2 page data DAT0. The 2 page dataDAT0 of a command set received by the semiconductor storage device 10 istransferred to the latch circuit of the sense amplifier unit SAU.Specifically, as shown in FIG. 6, the data items retained in the regionsPG2 and PG3 of the RAM 22 are transferred respectively to the latchcircuits ADL and BDL of the sense amplifier unit SAU. The regions PG2and PG3 of the RAM 22 are cleared when the retained data items aretransferred.

(Step S21)

When the semiconductor storage device 10 receives the second command setfrom the controller 20, the semiconductor storage device 10 sets theready/busy signal RBn to the “L” level and executes the second writeoperation in which the word line WL0 is selected. FIG. 10 shows anoutline of the second write operation. FIG. 10 shows a change inthreshold distribution of the memory cell according to the second writeoperation. As shown in FIG. 10, in the second write operation in thepresent embodiment, the semiconductor storage device 10 first executesinternal data load (IDL).

IDL is an operation in which data stored in the memory cell transistorMT corresponding to the selected word line WL is read before a writevoltage is applied. In the present embodiment, the sense amplifiermodule 17 executes read operation using voltages M1R, M2R, and M3R. Thevoltage M1R is not less than the voltage V1 and not more than thevoltage VM1, and the sense amplifier part SA determines whether or notthe threshold voltage of the memory cell transistor MT is less than thevoltage M1R through the read operation using the voltage M1R. Thevoltage M2R is not less than the voltage V5 and not more than thevoltage VM2, and the sense amplifier part SA determines whether or notthe threshold voltage of the memory cell transistor MT is less than thevoltage M2R through the read operation using the voltage M2R. Thevoltage M3R is not less than the voltage V9 and not more than thevoltage VM3, and the sense amplifier part SA determines whether or notthe threshold voltage of the memory cell transistor MT is less than thevoltage M3R through the read operation using the voltage M3R.

Consequently, the “11” data, the “10” data, the “00” data, and the “01”data written by the first write operation are restored in the latchcircuit in the sense amplifier module SAU. Specifically, as shown inFIG. 6, the first lower page data ML1 and the first upper page data MU1of the data DAT0 are transferred to the latch circuits CDL and DDL,respectively.

The semiconductor storage device 10 executes a 4 page write operationbased on the first lower page data ML1 and the first upper page data MU1read by IDL and the second lower page data ML2 and the second upper pagedata MU2 input from the controller 20.

In the second write operation, the sequencer 14 uses the voltages V1,V2, V3, V4, V5, V6, V7, V8, V9, VA, VB, VC, VD, VE, and VF as verifyvoltages. When the second write operation is executed, the thresholdvoltage of the memory cell transistor MT increases based on data to bewritten, and 16 threshold distributions are formed from four levels. Forexample, the threshold distributions at the “0” level, the “1” level,the “2” level, and the “3” level are formed from the thresholddistribution at “M0” level. The threshold distributions at the “4”level, the “5” level, the “6” level, and the “7” level are formed fromthe threshold distribution at “M1” level. The threshold distributions atthe “8” level, the “9” level, the “A” level, and the “B” level areformed from the threshold distribution at “M2” level. The thresholddistributions at the “C” level, the “D” level, the “E” level, and the“F” level are formed from the threshold distribution at “M3” level.

(Step S22)

When the regions PG2 and PG3 of the RAM 22 are cleared while thesemiconductor storage device 10 executes the second write operation instep S21, the CPU 23 transfers 4 page data DAT2, received from the hostapparatus 30, from the buffer memory 24 to the RAM 22. Then, forexample, as shown in FIG. 6, lower page data of the data DAT2 isretained in the region PG0, middle page data of the data DAT2 isretained in the region PG1, upper page data of the data DAT2 is retainedin the region PG2, and top page data of the data DAT2 is retained in theregion PG3.

(Step S23)

Next, the controller 20 applies data processing as in step S11 to the 4page data DAT2 retained in the RAM 22. When the data processing isexecuted, as shown in FIG. 6, the first lower page data ML1 of the dataDAT2 is retained in the region PG0, the first upper page data MU1 of thedata DAT2 is retained in the region PG1, the second lower page data ML2of the data DAT2 is retained in the region PG2, and the second upperpage data MU2 of the data DAT2 is retained in the region PG3.

(Step S24)

When the second write operation in step S21 is ended, the semiconductorstorage device 10 sets the ready/busy signal RBn to the “H” level andnotifies the controller 20 of the end of the write operation. Further,when the second write operation is ended, the latch circuit in the senseamplifier unit SAU is cleared as shown in FIG. 6.

(Step S25)

Next, the controller 20 issues the first command set and transmits thefirst command set to the semiconductor storage device 10. The firstcommand set includes the address information ADD specifying a word lineWL2 and the 2 page data DAT2. The 2 page data DAT2 of a command setreceived by the semiconductor storage device 10 is transferred to thelatch circuit of the sense amplifier unit SAU. Specifically, as shown inFIG. 6, the data items retained in the regions PG0 and PG1 of the RAM 22are transferred respectively to the latch circuits ADL and BDL of thesense amplifier unit SAU. Then, the regions PG0 and PG1 of the RAM 22are cleared when the retained data items are transferred.

(Step S26)

When the semiconductor storage device 10 receives the first command setfrom the controller 20, the semiconductor storage device 10 sets theready/busy signal RBn to the “L” level and executes the first writeoperation in which the word line WL2 is selected. The first writeoperation is similar to step S13, whereby the 2 bit data based on thefirst lower page data ML1 and the first upper page data MU1 of the dataDAT2 is written in the memory cell transistor MT connected to the wordline WL2.

(Step S27)

When the first write operation in step S26 is ended, the semiconductorstorage device 10 sets the ready/busy signal RBn to the “H” level andnotifies the controller 20 of the end of the write operation. Further,when the first write operation is ended, the latch circuit in the senseamplifier unit SAU is cleared as shown in FIG. 6.

(Step S28)

When the first write operation with respect to the word line WL1 and thefirst write operation with respect to the word line WL2 are ended, thecontroller 20 issues the second command set and transmits the secondcommand set to the semiconductor storage device 10. The second commandset includes the address information ADD specifying the word line WL1and the 2 page data DAT1. The 2 page data DAT1 of a command set receivedby the semiconductor storage device 10 is transferred to the latchcircuit of the sense amplifier unit SAU. Specifically, as shown in FIG.6, the data items retained in the regions PG4 and PG5 of the RAM 22 aretransferred respectively to the latch circuits ADL and BDL of the senseamplifier unit SAU. The regions PG4 and PG5 of the RAM 22 are clearedwhen the retained data items are transferred.

(Step S29)

When the semiconductor storage device 10 receives the second command setfrom the controller 20, the semiconductor storage device 10 sets theready/busy signal RBn to the “L” level and executes the second writeoperation in which the word line WL1 is selected. The second writeoperation is similar to step S21, and, first, as shown in FIG. 6, the 2page data stored in the word line WL1 by IDL is restored. Thesemiconductor storage device 10 executes a 4 page write operation basedon the first lower page data ML1 and the first upper page data MU1 readby IDL and the second lower page data ML2 and the second upper page dataMU2 input from the controller 20.

(Step S30)

When the regions PG4 and PG5 of the RAM 22 are cleared while thesemiconductor storage device 10 executes the second write operation instep S29, the CPU 23 transfers 4 page data DAT3, received from the hostapparatus 30, from the buffer memory 24 to the RAM 22. Then, forexample, as shown in FIG. 6, lower page data of the data DAT2 isretained in the region PG0, middle page data of the data DAT2 isretained in the region PG1, upper page data of the data DAT2 is retainedin the region PG4, and top page data of the data DAT2 is retained in theregion PG5.

(Step S31)

Next, the controller 20 applies data processing as in step S11 to the 4page data DAT3 retained in the RAM 22. When the data processing isexecuted, as shown in FIG. 6, the first lower page data ML1 of the dataDAT3 is retained in the region PG0, the first upper page data MU1 of thedata DAT3 is retained in the region PG1, the second lower page data ML2of the data DAT3 is retained in the region PG4, and the second upperpage data MU2 of the data DAT3 is retained in the region PG5.

(Step S32)

When the second write operation in step S31 is ended, the semiconductorstorage device 10 sets the ready/busy signal RBn to the “H” level andnotifies the controller 20 of the end of the write operation. Further,when the second write operation is ended, the latch circuit in the senseamplifier unit SAU is cleared as shown in FIG. 6.

In the subsequent operation, operation similar to steps S17 to S32 isrepeated. When the second write operation corresponding to the last 4page data is ended, the memory system 1 ends the write operation.

<Regarding Command Sequence>

Next, the details of a command sequence and a waveform in the abovewrite operation will be described using FIGS. 11 and 12. FIG. 11 shows acommand sequence corresponding to FIG. 5 and shows the input/outputsignal I/O input to the semiconductor storage device 10. FIG. 12 showswaveforms of the first and second write operations and shows a voltageapplied to the selected word line WL. In the following description, thecommand CMD input to the semiconductor storage device 10 is stored inthe command register 12, the address information ADD is stored in theaddress register 13, and the data DAT is stored in the latch circuitshown in FIG. 7.

As shown in FIG. 11, in step S12, the controller 20 first issues acommand “01h” and transmits the command “01h” to the semiconductorstorage device 10. The command “01h” is a command showing that the dataDAT to be subsequently received is write data on the first page. Next,the controller 20 issues a command “80h” and transmits the command “80h”to the semiconductor storage device 10. The command “80h” is a commandinstructing the semiconductor storage device 10 on the write operation.Then, the controller 20 continuously transmits the address informationADD, specifying the word line WL0, and the data DAT0, corresponding tothe first lower page data ML1, to the semiconductor storage device 10.The semiconductor storage device 10 allows the received data DAT0 to beretained in the latch circuit XDL of the sense amplifier module 17.Next, the controller 20 issues a command “xyh” and transmits the command“xyh” to the semiconductor storage device 10. The command “xyh” is acommand showing that information transmitted so far by the controller 20corresponds to information corresponding to one page in a plural pagewrite operation.

When the command “xyh” is stored in the command register 12, thesequencer 14 sets the ready/busy signal RBn to the “L” level andtransfers the write data retained in the latch circuit XDL to, forexample, the latch circuit ADL. The sequencer 14 sets the ready/busysignal RBn to the “H” level. This operation is described as “Dummy busy”in FIG. 11.

When the ready/busy signal RBn is set to the “H” level, the controller20 issues a command “02h” and transmits the command “02h” to thesemiconductor storage device 10. The command “02h” is a command showingthat the data DAT to be subsequently received is write data on thesecond page. Then, the controller 20 continuously transmits the command“80h”, the address information ADD specifying the word line WL0, and thedata DAT0, corresponding to the first upper page data MU1, to thesemiconductor storage device 10. The semiconductor storage device 10allows the received data DAT0 to be retained in the latch circuit XDL ofthe sense amplifier module 17. Then, the controller 20 issues a command“10h” and transmits the command “10h” to the semiconductor storagedevice 10. The command “10h” is a command instructing the semiconductorstorage device 10 to execute the write operation.

A group having from the above command “01h” to the command “10h”corresponds to the first command set. When the command “10h” is storedin the command register 12, the sequencer 14 sets the ready/busy signalRBn to the “L” level to transfer the write data retained in the latchcircuit XDL to, for example, the latch circuit BDL, and thus to executethe first write operation (step S13). The illustrated tProg (MLC)corresponds to a processing period of the first write operation. FIG. 12shows an example of a waveform in this first write operation.

As shown in FIG. 12, the row decoder 16 first applies a voltage Vpgm1 tothe selected word line WL. A voltage Vpgm is a program voltage and is ahigh voltage capable of injecting electrons into a charge accumulationlayer of the memory cell transistor MT. When the voltage Vpgm1 isapplied to the selected word line WL, the threshold voltage of thememory cell transistor MT connected to the selected word line WL isincreased by injection of electrons into the charge accumulation layerdue to a potential difference between a gate and a channel. Among thememory cell transistors MT connected to the selected word line WL, inthe memory cell transistor MT in which writing is inhibited, thecorresponding sense amplifier unit SAU, for example, charges the bitline BL to reduce the potential difference between the gate and thechannel, and thus to suppress the increase in threshold voltage. Then,the row decoder 16 applies a voltage Vvfy. The voltage Vvfy is a verifyvoltage and is, for example, the voltage VM1 shown in FIG. 9.

An operation of applying the above program voltage and the verifyvoltage corresponds to one program loop. Such a program loop is repeatedwhile increasing a value of the program voltage by ΔVpgm1. The value ofthe voltage Vvfy applied in each program loop is changed to, forexample, the voltage VM2 or VM3 according to the progress of the firstwrite operation. A plurality of types of verify voltages may be used inone program loop. When the sequencer 14 has passed verificationaccording to the voltage VM3, for example, the sequencer 14 ends thefirst write operation and sets the ready/busy signal RBn to the “H”level (step S16).

After that, in step S17, the controller 20 issues the first command setand transmits the first command set to the semiconductor storage device10. As shown in FIG. 11, relative to the first command set in step S12,the first command set in step S17 is similar to a command set in whichthe address information ADD specifying the word line WL0 is replaced bythe address information ADD specifying the word line WL1 and the pagecorresponding to the data DAT0 is replaced by the page corresponding tothe data DAT1. Since the following similar command sets have similarconfigurations except that the address information ADD and the data DATare different, the detailed description will be omitted. When thecommand “10h” included in the first command set is stored in the commandregister 12, the semiconductor storage device 10 executes the firstwrite operation in which the word line WL1 is selected (step S18).

After that, in step S20, the controller 20 issues the command “03h” andtransmits the command “03h” to the semiconductor storage device 10. Thecommand “03h” is a command showing that the data DAT to be subsequentlyreceived is write data on the third page. Then, the controller 20continuously transmits the command “80h”, the address information ADDspecifying the word line WL0, and the data DAT0, corresponding to thesecond lower page data ML2, to the semiconductor storage device 10. Thesemiconductor storage device 10 allows the received data DAT0 to beretained in the latch circuit XDL of the sense amplifier module 17.Next, the controller 20 issues the command “xyh” and transmits thecommand “xyh” to the semiconductor storage device 10. When the command“xyh” is stored in the command register 12, the sequencer 14 sets theready/busy signal RBn to the “L” level and transfers the write dataretained in the latch circuit XDL to, for example, the latch circuitADL. The sequencer 14 sets the ready/busy signal RBn to the “H” level.

When the ready/busy signal RBn is set to the “H” level, the controller20 issues a command “04h” and transmits the command “04h” to thesemiconductor storage device 10. The command “04h” is a command showingthat the data DAT to be subsequently received is write data on thefourth page. Then, the controller 20 continuously transmits the command“80h”, the address information ADD specifying the word line WL0, and thedata DAT0, corresponding to the second upper page data MU2, to thesemiconductor storage device 10. The semiconductor storage device 10allows the received data DAT0 to be retained in the latch circuit XDL ofthe sense amplifier module 17. Then, the controller 20 issues a command“10h” and transmits the command “10h” to the semiconductor storagedevice 10.

A group having from the above command “03h” to the command “10h”corresponds to the second command set. When the command “10h” is storedin the command register 12, the sequencer 14 sets the ready/busy signalRBn to the “L” level to transfer the write data retained in the latchcircuit XDL to, for example, the latch circuit BDL, and thus to executethe second write operation (step S21). The illustrated tProg (QLC)corresponds to a processing period of the second write operation. FIG.12 shows an example of a waveform in this second write operation.

As shown in FIG. 12, the row decoder 16 first sequentially applies thevoltages M1R, M2R, and M3R to the selected word line WL. This operationcorresponds to IDL, and the sense amplifier module 17 reads 2 page datastored in the memory cell transistor MT connected to the selected wordline WL. The read 2 page data is retained in, for example, the latchcircuits CDL and DDL. Subsequently, the sequencer 14 repeats a programloop based on 4 page data retained in the latch circuits ADL, BDL, CDL,and DDL. In the program loop in the second write operation, relative tothe program loop in the first write operation, the value of the programvoltage to be applied first, the value of the program voltageincremented for each program loop, and the verify voltage to be used aredifferent.

Specifically, the value of the program voltage to be applied first isVpgm2, and the value of the incremented program voltage is ΔVpgm2. Someof the voltages V1, V2, V3, V4, V5, V6, V7, V8, V9, VA, VB, VC, VD, VE,and VF as the verify voltages are selected and used in the ascendingorder of values. Vpgm2 is smaller than Vpgm1, and ΔVpgm2 is smaller thanΔVpgm1. As described above, the second write operation uses the programvoltage and ΔVpgm smaller than those in the first write operation andfinely controls the threshold voltage of the memory cell transistor MT.When the sequencer 14 has passed verification according to the voltageVF, for example, the sequencer 14 ends the second write operation andsets the ready/busy signal RBn to the “H” level (step S24). Since stepS25 and subsequent operations shown in FIG. 11 are similar to the aboveoperations, the description will be omitted.

[1-2-2] Read Operation of Memory System 1

Next, the read operation in the memory system 1 will be described. Theread operation in the memory system 1 according to the presentembodiment is executed in the unit of four pages. Namely, the controller20 instructs the semiconductor storage device 10 to read data by fourpages. The controller 20 then decodes read data transferred from thesemiconductor storage device 10 and transmits the decoded data to thehost apparatus 30.

Hereinafter, the details of the read operation in the memory system 1will be described using FIG. 13. FIG. 13 shows a flowchart of the readoperation in the memory system 1.

As shown in FIG. 13, the host apparatus 30 first instructs thecontroller 20 on the read operation for specified data (step S50). Thecontroller 20 issues the command CMD and the address information ADDbased on the received instruction and transmits the command CMD and theaddress information ADD to the semiconductor storage device 10 (stepS51). The semiconductor storage device 10 then executes the readoperation based on the received command CMD and address information ADD(step S52).

FIG. 14 shows the details of a command sequence and the read operationin steps S51 and S52. FIG. 14 shows states of the input/output signalI/O input to the semiconductor storage device 10, a voltage applied tothe selected word line WL, and the latch circuits ADL, BDL, CDL, andXDL.

As shown in FIG. 14, the controller 20 first issues a command “xxh” andtransmits the command “xxh” to the semiconductor storage device 10. Thecommand “xxh” is a prefix command instructing a plural page readoperation with respect to the memory cell transistors MT connected tothe common word line WL. Then, the controller 20 issues a command “00h”and the address information ADD and sequentially transmits the command“00h” and the address information ADD to the semiconductor storagedevice 10. The command “00h” is a command instructing the semiconductorstorage device 10 on the read operation. Subsequently, the controller 20issues a command “yyh” and transmits the command “yyh” to thesemiconductor storage device 10. The command “yyh” is a commandinstructing the semiconductor storage device 10 to execute the readoperation. When the command “yyh” is stored in the command register 12,the sequencer 14 sets the ready/busy signal RBn to the “L” level andexecutes the read operation.

When the read operation is started, the row decoder 16 increases avoltage to be applied to the selected word line WL in order of V1, V2,V3, V4, V5, V6, V7, V8, V9, VA, VB, VC, VD, VE, and VF. The senseamplifier module 17 executes the read operations 1R, 2R, 3R, 4R, 5R, 6R,7R, 8R, 9R, AR, BR, CR, DR, ER, and FR in a timing at which each voltageis applied.

In the present embodiment, since the data converted from the 4-4-3-4code to the 1-2-4-8 code is read, the first lower page data ML1 isdetermined by the read operation 8R, the first upper page data MU1 isdetermined by the read operations 4R and CR, the second lower page dataML2 is determined by the read operations 2R, 6R, AR, and ER, and thesecond upper page data MU2 is determined by the read operations 1R, 3R,5R, 7R, 9R, BR, DR, and FR. Hereinafter, the present invention will bedescribed, taking as an example a case where the first lower page dataML1, the first upper page data MU1, the second lower page data ML2, andthe second upper page data MU2 are assigned respectively to the latchcircuits DDL, CDL, BDL, and ADL.

Since data read by the read operation 1R corresponds to the second upperpage data MU2, this data is stored in the latch circuit ADL. Since dataread by the read operation 2R corresponds to the second lower page dataML2, this data is stored in the latch circuit BDL. Since data read bythe read operation 3R corresponds to the second upper page data MU2,this data and data already retained in the latch circuit ADL are subjectto arithmetic processing of the operation part OP, and results thereofare stored in the latch circuit ADL. Since data read by the readoperation 4R corresponds to the first upper page data MU1, this data isstored in the latch circuit CDL. Hereinafter, the read operationsimilarly progresses, and the arithmetic processing is executed ifneeded.

Once the read operation 8R is completed, the final first lower page dataML1 is stored in each of the latch circuits DDL, and the data istransferred to each of the latch circuits XDL. The sequencer 14 thensets the ready/busy signal RBn to the “H” level. The controller 20responding to this toggles the signal RE and allows read data to beoutput from the latch circuit XDL to the controller 20. The controller20 then issues a command “zzh” to transmit the command “zzh” to thesemiconductor storage device 10, and thus to read the first upper pagedata MU1. When the command “zzh” is stored in the command register 12,the sequencer 14 sets the ready/busy signal RBn to the “L” level.

Similarly, once the read operation CR is completed, the final firstupper page data MU1 is stored in each of the latch circuits CDL, oncethe read operation ER is completed, the final second lower page data ML2is stored in the latch circuit BDL, and once the read operation FR iscompleted, the final second upper page data MU2 is stored in the latchcircuit ADL. Those data items are sequentially transferred to the latchcircuit XDL and output to the controller 20 by a method similar to theabove data transfer of the first lower page data ML1. Then, thesequencer 14 maintains the ready/busy signal RBn at the “H” level afteroutput of the finally determined second upper page data MU2.

As described above, the 4 page data is read from the semiconductorstorage device 10, and the controller 20 allows the RAM 22 to retain theread 4 page data. Then, as shown in FIG. 13, the CPU 23 applies codeconversion to the 4 page data DAT retained by the RAM 22 (step S53). Thecode conversion in step S53 is the reverse processing to the codeconversion executed in the write operation. Specifically, codeconversion from the 1-2-4-8 code to the 4-4-3-4 code is executed.Consequently, the read data is decoded into a state similar to the statebefore the code conversion in the write operation.

Next, the ECC circuit 25 applies error correction processing to the 4page data DAT retained in the RAM 22. Specifically, an error of data iscorrected for each page, based on parity given to each page (step S54).When the error correction is failed (No in step S55), the controller 20executes a retry sequence. When data has passed the error correction(Yes in step S55), the controller 20 decodes data randomized for eachpage (step S56). Then, the controller 20 transmits this data to the hostapparatus 30 (step S57), and the memory system 1 ends the readoperation. If data of five or more pages is read, the controller 20repeats the operations in steps S51 to S57.

[1-3] Effects of First Embodiment

The memory system 1 according to the present embodiment can improvereliability of written data. Hereinafter, the details of the effects ofthe first embodiment will be described.

In the semiconductor storage device, a memory cell is sometimes formedof a MONOS film, for example. It has been known that the memory cellusing the MONOS film has the following characteristics. For example,when electrons are injected into a charge accumulation layer of thememory cell by a write operation, after end of the write operation,there occurs a phenomenon, called initial drop, in which a constantamount of electrons leave based on an amount of the injected electrons.Consequently, the threshold voltage of the memory cell drops, and alower skirt of the threshold distribution of the memory cell extends.When the write operation of a memory cell adjacent to a memory cell inwhich data is written is executed, a parasitic capacitance between thememory cells changes upon an increase in the threshold voltage of theadjacent memory cell. Consequently, the threshold voltage of the memorycell in which data is already written rises, and an upper skirt of thethreshold distribution of the memory cell extends. As described above,the threshold distribution of the memory cell sometimes deviates from adesired value due to the influence after data is written.

Thus, in a NAND type flash memory including a memory cell capable ofretaining 4 bit data, the memory system 1 according to the presentembodiment applies the 1-2-4-8 code as coding of data to be written.When the 1-2-4-8 code is used in data assignment, the semiconductorstorage device 10 can form a lower page by writing of 1 bit data, canform lower and middle pages by writing of 2 bit data, and can formlower, middle, and upper pages by writing of 3 bit data. Namely, thesemiconductor storage device 10 can write 4 bit data for each page.

In the memory system 1 according to the present embodiment, 4 page datais written in the memory cell while the write operation is divisionallyperformed twice. Specifically, the semiconductor storage device 10writes two pages including the lower and middle bits in the first writeoperation (first write operation) and writes two pages including theupper and top bits in the subsequent second write operation (secondwrite operation).

Further, in the memory system 1 according to the present embodiment, thefirst write operation with respect to the adjacent word line WL isexecuted between the first write operation and the second writeoperation. Specifically, for example when the first write operation withrespect to the word line WL0 is executed, the first write operation withrespect to the next adjacent word line WL1 is executed, and after that,the second write operation with respect to the word line WL0 isexecuted.

As described above, when the first write operation with respect to theword line WL1 is executed after the first write operation with respectto the word line WL0 is executed, while the first write operation withrespect to the word line WL1 is executed, the initial drop occurs in thememory cell corresponding to the word line WL0. Upon the increase in thethreshold voltage of the adjacent memory cell due to the first writeoperation with respect to the word line WL1, the memory cellcorresponding to the word line WL0 is affected by a parasiticcapacitance between the memory cells. Namely, the second write operationwith respect to the word line WL0 is executed from the state affected bythe initial drop occurring due to the first write operation with respectto the word line WL0 and the parasitic capacitance between memory cellsoccurring due to the first write operation with respect to the word lineWL1, and therefore, in the threshold distribution to be finallyobtained, these influences can be ignored.

Since the second write operation is a write operation with respect tothe memory cell transistor MT whose threshold voltage rises to someextent due to the first write operation, a variation of the thresholdvoltage according to the second write operation is reduced. Namely, inthe second write operation, since the amount of electrons injected intothe charge accumulation layer is smaller than that in the case ofwriting data of four bits collectively, an initial drop amount of thethreshold voltage of the memory cell transistor MT and the influence ofthe parasitic capacitance between adjacent memory cells can be reduced.

As described above, in the memory system 1 according to the presentembodiment, the influence of the initial drop of the threshold voltageand the influence of the parasitic capacitance between memory cells canbe reduced by executing the write operation in which the 4 page data iswritten divisionally twice. Accordingly, since the memory system 1 cansuppress a spread of the threshold distribution in the memory cell inwhich data is written, reliability of the data can be improved.

In the write operation of the semiconductor storage device 10 in thepresent embodiment, data items of the lower and middle bits used in thesecond write operation are restored by being read from the memory cellby IDL. Namely, when 4 page data is written in the first and secondwrite operations, the controller 20 transmits 2 page data to be used inthe first write operation to the semiconductor storage device 10 andthen can discard the data.

Consequently, the controller 20 can execute the above write operation ifthe capacitance of the RAM 22 is at least six pages. Namely, in thememory system 1 according to the present embodiment, since the capacityof the RAM 22 can be reduced, the circuit area of the controller 20 canbe reduced.

In the write operation in the memory system 1 in the present embodiment,the controller 20 applies various data processings to write datareceived from the host apparatus 30. Specifically, the CPU 23 executescode conversion into the 4-4-3-4 code with respect to the write datareceived from the host apparatus 30, and the ECC circuit 25 gives parityto this data. Then, the CPU 23 executes code conversion from the 4-4-3-4code into the 1-2-4-8 code with respect to the data to which parity isgiven, and the data subjected to the code conversion to the 1-2-4-8 codeis written in the semiconductor storage device 10. In the readoperation, reconversion from the 1-2-4-8 code to the 4-4-3-4 code isperformed, and an error of data converted to the 4-4-3-4 code iscorrected.

Consequently, the ECC circuit 25 can execute the error correctionprocessing in such a state that data of the top page in which an errorbit is most likely to occur during reading in the 1-2-4-8 code isdispersed in four pages. In other words, since the ECC circuit 25executes the error correction processing after averaging the number oferror bits between pages, the probability of success of error correctioncan be increased. Accordingly, the memory system 1 according to thepresent embodiment can improve the reliability of read data when writingdata with the use of the 1-2-4-8 code.

In the above description, the case of using the NOMOS film in the memorycell has been described as an example, but the present invention is notlimited to this case. For example, also in a case of using a memory cellusing a floating gate, similar effects can be obtained by executing thewrite operation in the present embodiment.

In the second write operation described in the present embodiment, thevoltages M1R, M2R, and M3R used in IDL may be different from the readvoltages used in the read operation. For example, the voltages M1R, M2R,and M3R may be different from the voltages V1, V2, . . . , and VF.Consequently, the voltages M1R, M2R, and M3R can be set to valuesoptimized to the threshold distribution formed by the first writeoperation and can be suppressed by the number of error bits generated inIDL.

[2] Second Embodiment

Next, a memory system 1 according to a second embodiment will bedescribed. The memory system 1 according to the present embodimentexecutes 3 page writing in a first write operation and executes 3 pageIDL in a second write operation. Hereinafter, differences from the firstembodiment will be described.

[2-1] Configuration of Memory System 1

First, a configuration of the memory system 1 will be described usingFIG. 15. The memory system 1 according to the present embodiment differsfrom the memory system 1 according to the first embodiment in thecapacity of the RAM 22 of the controller 20. Specifically, as shown inFIG. 15, the RAM 22 includes the regions PG0 to PG4 and is smaller byone page than the RAM 22 in the first embodiment. Other configurationsare similar to those in FIG. 1 described in the first embodiment.

[2-2] Write Operation of Memory System 1

<Regarding Flow of Write Operation>

Next, a write operation in the memory system 1 will be described. In thewrite operation in the memory system 1 according to the presentembodiment, the controller 20 applies various data processings to 4 pagedata received from a host apparatus 30, and this data is divided intothree pages and one page to be transferred to a semiconductor storagedevice 10. The semiconductor storage device 10 then writes 3 bit data inmemory cell transistors MT, sharing a word line WL, in the first writeoperation and writes 1 bit data in the memory cell transistors MT in thesecond write operation.

Hereinafter, the details of the write operation in the memory system 1will be described using FIGS. 16 and 17. FIG. 16 shows a flow chart ofthe write operation in the memory system 1, and FIG. 17 shows an exampleof data retained by the RAM 22 and a sense amplifier unit SAU in eachstep shown in FIG. 16.

(Step S50)

First, as in step S10 described in the first embodiment, the controller20 stores 4 page write data DAT0, received from the host apparatus 30,in each region PG of the RAM 22 in the unit of a page. For example, asshown in FIG. 17, lower page data of the data DAT0 is retained in theregion PG0, middle page data of the data DAT0 is retained in the regionPG1, upper page data of the data DAT0 is retained in the region PG2, andtop page data of the data DAT0 is retained in the region PG3.

(Step S51)

Next, the controller 20 applies data processing as in step S11,described in the first embodiment, to the 4 page data DAT0 retained inthe RAM 22. In the data processing in the present embodiment, codeconversion as shown in FIG. 18 is executed. In the code conversion shownin FIG. 18, compared to FIG. 8 described in the first embodiment, thename of data corresponding to each page after the code conversion isdifferent.

As shown in FIG. 18, in the present embodiment, the lower page dataafter code conversion is referred to as first lower page data TL1, themiddle page data after code conversion is referred to as first middlepage data TM1, the upper page data after code conversion is referred toas first upper page data TU1, and the top page data after codeconversion is referred to as second single page data SL2.

As shown in FIG. 17, the first lower page data TL1 of the data DAT0 isretained in the region PG0, the first middle page data TM1 of the dataDAT0 is retained in the region PG1, the first upper page data TU1 of thedata DAT0 is retained in the region PG2, and the second single page dataSL2 of the data DAT0 is retained in the region PG3.

(Step S52)

Next, the controller 20 issues a third command set and transmits thethird command set to the semiconductor storage device 10. The thirdcommand set includes a command instructing writing, address informationADD specifying the word line WL0, and the 3 page data DAT0. The 3 pagedata DAT0 of a command set received by the semiconductor storage device10 is transferred to a latch circuit of the sense amplifier unit SAU.Specifically, as shown in FIG. 17, data items retained in the regionsPG0, PG1, and PG2 of the RAM 22 are transferred to latch circuits ADL,BDL, and CDL of the sense amplifier unit SAU, respectively. Then, theregions PG0, PG1, and PG2 of the RAM 22 are cleared when the retaineddata items are transferred.

(Step S53)

When the semiconductor storage device 10 receives the third command setfrom the controller 20, the semiconductor storage device 10 sets aready/busy signal RBn to an “L” level and executes the first writeoperation in which the word line WL0 is selected. FIG. 19 shows anoutline of the first write operation in the present embodiment. FIG. 19shows a change in threshold distribution of a memory cell according tothe first write operation. As shown in FIG. 19, in the first writeoperation, the semiconductor storage device 10 executes a 3 page writeoperation based on the first lower page data TL1, the first middle pagedata TM1, and the first upper page data TU1 input from the controller20.

The threshold voltage of the memory cell transistor MT before executionof the first write operation is distributed at an “ER” level. In thefirst write operation, the sequencer 14 uses voltages VM1, VM2, VM3,VM4, VM5, VM6, and VM7 as verify voltages.

In the present embodiment, the voltage VM1 is used when “110” (“lowerbit/middle bit/upper bit” after code conversion) data is written, andthe voltage VM1 is not less than a voltage V1 and less than a voltageV3. The voltage VM2 is a verify voltage used when “100” data is written,and the voltage VM2 is not less than the voltage V3 and less than avoltage V5. The voltage VM3 is a verify voltage used when “101” data iswritten, and the voltage VM3 is not less than the voltage V5 and lessthan a voltage V7. The voltage VM4 is a verify voltage used when “001”data is written, and the voltage VM3 is not less than the voltage V7 andless than a voltage V9. The voltage VM5 is a verify voltage used when“000” data is written, and the voltage VM5 is not less than the voltageV9 and less than a voltage VB. The voltage VM6 is a verify voltage usedwhen “010” data is written, and the voltage VM6 is not less than thevoltage VB and less than a voltage VD. The voltage VM7 is a verifyvoltage used when “011” data is written, and the voltage VM7 is not lessthan the voltage VD and less than the voltage VF.

When the first write operation is executed, the threshold voltage of thememory cell transistor MT increases based on data to be written, andeight threshold distributions are formed. An “M0” level shown in FIG. 19is formed by the memory cell transistors MT in which “111” data iswritten. An “M1” level is formed by the memory cell transistors MT inwhich “110” data is written. An “M2” level is formed by the memory celltransistors MT in which “100” data is written. An “M3” level is formedby the memory cell transistors MT in which “101” data is written. An“M4” level is formed by the memory cell transistors MT in which “001”data is written. An “M5” level is formed by the memory cell transistorsMT in which “000” data is written. An “M6” level is formed by the memorycell transistors MT in which “010” data is written. An “M7” level isformed by the memory cell transistors MT in which “011” data is written.

An “M0” level is less than the voltage V1, and as in the firstembodiment, the “M0” level corresponds to an erase state of the memorycell transistor MT. Namely, in the first write operation, the increasein threshold voltage is suppressed in the memory cell transistor MT inwhich the “111” data is written. A threshold voltage at the “M1” levelis not less than the voltage VM1 and less than the voltage V3. Athreshold voltage at the “M2” level is not less than the voltage VM2 andless than the voltage V5. A threshold voltage at the “M3” level is notless than the voltage VM3 and less than the voltage V7. The same applieshereinafter.

As described above, the voltages VM1, VM2, VM3, VM4, VM5, VM6, and VM7used in verification in the first write operation are set such that thethreshold voltage of the memory cell transistor MT having passedverification does not exceed the voltages V3, V5, V7, V9, VB, VD, andVF, respectively.

(Step S54)

When the regions PG0, PG1, and PG2 of the RAM 22 are cleared while thesemiconductor storage device 10 executes the first write operation instep S53, the CPU 23 transfers 4 page data DAT1, received from the hostapparatus 30, from a buffer memory 24 to the RAM 22. Then, for example,as shown in FIG. 17, lower page data of the data DAT1 is retained in theregion PG0, middle page data of the data DAT1 is retained in the regionPG1, upper page data of the data DAT1 is retained in the region PG2, andtop page data of the data DAT1 is retained in the region PG4.

(Step S55)

Next, the controller 20 applies data processing as in step S51 to the 4page data DAT1 retained in the RAM 22. When the data processing isexecuted, as shown in FIG. 17, the first lower page data TL1 of the dataDAT1 is retained in the region PG0, the first middle page data TM1 ofthe data DAT1 is retained in the region PG1, the first upper page dataTU1 of the data DAT1 is retained in the region PG2, and the secondsingle page data SL2 of the data DAT1 is retained in the region PG4.

(Step S56)

When the first write operation in step S53 is ended, the semiconductorstorage device 10 sets the ready/busy signal RBn to an “H” level andnotifies the controller 20 of the end of the write operation. Further,when the first write operation is ended, the latch circuit in the senseamplifier unit SAU is cleared as shown in FIG. 17.

(Step S57)

Next, the controller 20 issues the third command set and transmits thethird command set to the semiconductor storage device 10. The thirdcommand set includes the address information ADD specifying a word lineWL1 and the data DAT1 corresponding to three pages. The 3 page data DAT1of a command set received by the semiconductor storage device 10 istransferred to the latch circuit of the sense amplifier unit SAU.Specifically, as shown in FIG. 17, data items retained in the regionsPG0, PG1, and PG2 of the RAM 22 are transferred to latch circuits ADL,BDL, and CDL of the sense amplifier unit SAU, respectively. Then, theregions PG0, PG1, and PG2 of the RAM 22 are cleared when the retaineddata items are transferred.

(Step S58)

When the semiconductor storage device 10 receives the third command setfrom the controller 20, the semiconductor storage device 10 sets theready/busy signal RBn to the “L” level and executes the first writeoperation in which the word line WL1 is selected. The first writeoperation is similar to step S53, whereby the 3 page data based on thefirst lower page data TL1, the first middle page data TM1, and the firstupper page data TU1 of the data DAT1 is written in the memory celltransistor MT connected to the word line WL1.

(Step S59)

When the first write operation in step S58 is ended, the semiconductorstorage device 10 sets the ready/busy signal RBn to the “H” level andnotifies the controller 20 of the end of the write operation. Further,when the first write operation is ended, the latch circuit in the senseamplifier unit SAU is cleared as shown in FIG. 17.

(Step S60)

When the first write operation with respect to the word line WL0 and thefirst write operation with respect to the word line WL1 are ended, thecontroller 20 issues a fourth command set and transmits the fourthcommand set to the semiconductor storage device 10. The fourth commandset includes a command instructing writing, the address information ADDspecifying the word line WL0, and the 1 page data DAT0. The 1 page dataDAT0 of a command set received by the semiconductor storage device 10 istransferred to the latch circuit of the sense amplifier unit SAU.Specifically, as shown in FIG. 17, the data retained in the region PG3of the RAM 22 is transferred to the latch circuit ADL of the senseamplifier unit SAU. The region PG3 of the RAM 22 is cleared when theretained data is transferred.

(Step S61)

When the semiconductor storage device 10 receives a second command setfrom the controller 20, the semiconductor storage device 10 sets theready/busy signal RBn to the “L” level and executes the second writeoperation in which the word line WL0 is selected. FIG. 20 shows anoutline of the second write operation in the present embodiment. FIG. 20shows a change in threshold distribution of the memory cell according tothe second write operation. As shown in FIG. 20, in the second writeoperation in the present embodiment, the semiconductor storage device 10first executes internal data load (IDL).

In IDL in the present embodiment, the sense amplifier module 17 executesread operation using voltages M1R, M2R, M3R, M4R, M5R, M6R, and M7R. Thevoltage M1R is not less than the voltage V1 and not more than thevoltage VM1, and a sense amplifier part SA determines whether or not thethreshold voltage of the memory cell transistor MT is less than thevoltage M1R through the read operation using the voltage M1R. Thevoltage M2R is not less than the voltage V3 and not more than thevoltage VM2, and the sense amplifier part SA determines whether or notthe threshold voltage of the memory cell transistor MT is less than thevoltage M2R through the read operation using the voltage M2R. Thevoltage M3R is not less than the voltage V5 and not more than thevoltage VM3, and the sense amplifier part SA determines whether or notthe threshold voltage of the memory cell transistor MT is less than thevoltage M3R through the read operation using the voltage M3R. The sameapplies hereinafter.

Consequently, the “111” data, the “110” data, the “100” data, the “101”data, the “001” data, the “000” data, the “010” data, and the “011” datawritten by the first write operation are restored in the latch circuitin the sense amplifier module SAU. Specifically, as shown in FIG. 17,the first lower page data TL1, the first middle page data TM1, and thefirst upper page data TU1 of the data DAT0 are transferred to the latchcircuits BDL, CDL, and DDL.

The semiconductor storage device 10 executes 4 page write operationbased on the first lower page data TL1, the first middle page data TM1,and the first upper page data TU1 read by IDL and the second single pagedata SL2 input from the controller 20.

In the second write operation, the sequencer 14 uses the voltages V1,V2, V3, V4, V5, V6, V7, V8, V9, VA, VB, VC, VD, VE, and VF as verifyvoltages, as in the first embodiment. When the second write operation isexecuted, the threshold voltage of the memory cell transistor MT risesbased on data to be written, and 16 threshold distributions are formedfrom eight levels. For example, the threshold distributions at a “0”level and a “1” level are formed from the threshold distribution at the“M0” level. The threshold distributions at a “2” level and a “3” levelare formed from the threshold distribution at the “M1” level. Thethreshold distributions at a “4” level and a “5” level are formed fromthe threshold distribution at the “M2” level. The thresholddistributions at a “6” level and a “7” level are formed from thethreshold distribution at the “M3” level. The same applies hereinafter.

(Step S62)

When the region PG3 of the RAM 22 is cleared while the semiconductorstorage device 10 executes the second write operation in step S61, theCPU 23 transfers 4 page data DAT2, received from the host apparatus 30,from the buffer memory 24 to the RAM 22. Then, for example, as shown inFIG. 17, lower page data of the data DAT2 is retained in the region PG0,middle page data of the data DAT2 is retained in the region PG1, upperpage data of the data DAT2 is retained in the region PG2, and top pagedata of the data DAT2 is retained in the region PG3.

(Step S63)

Next, the controller 20 executes data processing as in step S51 withrespect to the 4 page data DAT2 retained in the RAM 22. When the dataprocessing is executed, as shown in FIG. 17, the first lower page dataTL1 of the data DAT2 is retained in the region PG0, the first middlepage data TM1 of the data DAT2 is retained in the region PG1, the firstupper page data TU1 of the data DAT2 is retained in the region PG2, andthe second single page data SL2 of the data DAT2 is retained in theregion PG3.

(Step S64)

When the second write operation in step S21 is ended, the semiconductorstorage device 10 sets the ready/busy signal RBn to the “H” level andnotifies the controller 20 of the end of the write operation. Further,when the second write operation is ended, the latch circuit in the senseamplifier unit SAU is cleared as shown in FIG. 17.

(Step S65)

Next, the controller 20 issues the third command set and transmits thethird command set to the semiconductor storage device 10. The thirdcommand set includes the address information ADD specifying a word lineWL2 and the 3 page data DAT2. The 3 page data DAT2 of a command setreceived by the semiconductor storage device 10 is transferred to thelatch circuit of the sense amplifier unit SAU. Specifically, as shown inFIG. 17, data items retained in the regions PG0, PG1, and PG2 of the RAM22 are transferred to latch circuits ADL, BDL, and CDL of the senseamplifier unit SAU, respectively. Then, the regions PG0, PG1, and PG2 ofthe RAM 22 are cleared when the retained data items are transferred.

(Step S66)

When the semiconductor storage device 10 receives the first command setfrom the controller 20, the semiconductor storage device 10 sets theready/busy signal RBn to the “L” level and executes the first writeoperation in which the word line WL2 is selected. The first writeoperation is similar to step S53, whereby the 3 bit data based on thefirst lower page data TL1, the first middle page data TM1, and the firstupper page data TU1 of the data DAT2 is written in the memory celltransistor MT connected to the word line WL2.

(Step S67)

When the first write operation in step S66 is ended, the semiconductorstorage device 10 sets the ready/busy signal RBn to the “H” level andnotifies the controller 20 of the end of the write operation. Further,when the first write operation is ended, the latch circuit in the senseamplifier unit SAU is cleared as shown in FIG. 17.

(Step S68)

When the first write operation with respect to the word line WL1 and thefirst write operation with respect to the word line WL2 are ended, thecontroller 20 issues the fourth command set and transmits the fourthcommand set to the semiconductor storage device 10. The fourth commandset includes the address information ADD specifying the word line WL1and the 1 page data DAT1. The 1 page data DAT1 of a command set receivedby the semiconductor storage device 10 is transferred to the latchcircuit of the sense amplifier unit SAU. Specifically, as shown in FIG.17, the data retained in the region PG4 of the RAM 22 is transferred tothe latch circuit ADL of the sense amplifier unit SAU. The region PG4 ofthe RAM 22 is cleared when the retained data is transferred.

(Step S69)

When the semiconductor storage device 10 receives the second command setfrom the controller 20, the semiconductor storage device 10 sets theready/busy signal RBn to the “L” level and executes the second writeoperation in which the word line WL1 is selected. The second writeoperation is similar to step S61, and, first, as shown in FIG. 17, the 3page data stored in the word line WL1 by IDL is restored. Thesemiconductor storage device 10 executes 4 page write operation based onthe first lower page data TL1, the first middle page data TM1, and thefirst upper page data TU1 read by IDL and the second single page dataSL2 input from the controller 20.

(Step S70)

When the region PG4 of the RAM 22 is cleared while the semiconductorstorage device 10 executes the second write operation in step S69, theCPU 23 transfers 4 page data DAT3, received from the host apparatus 30,from the buffer memory 24 to the RAM 22. Then, for example, as shown inFIG. 17, the lower page data of the data DAT2 is retained in the regionPG0, the middle page data of the data DAT2 is retained in the regionPG1, the upper page data of the data DAT2 is retained in the region PG2,and the top page data of the data DAT2 is retained in the region PG4.

(Step S71)

Next, the controller 20 executes data processing as in step S51 withrespect to the 4 page data DAT3 retained in the RAM 22. When the dataprocessing is executed, as shown in FIG. 17, the first lower page dataTL1 of the data DAT3 is retained in the region PG0, the first middlepage data TM1 of the data DAT3 is retained in the region PG1, the firstupper page data TU1 of the data DAT3 is retained in the region PG2, andthe second single page data SL2 of the data DAT3 is retained in theregion PG3.

(Step S72)

When the second write operation in step S31 is ended, the semiconductorstorage device 10 sets the ready/busy signal RBn to the “H” level andnotifies the controller 20 of the end of the write operation. Further,when the second write operation is ended, the latch circuit in the senseamplifier unit SAU is cleared as shown in FIG. 17.

In the subsequent operation, operation similar to steps S57 to S72 isrepeated. When the second write operation corresponding to the last 4page data is ended, the memory system 1 ends the write operation.

<Regarding Command Sequence>

Next, the details of a command sequence and a waveform in the abovewrite operation will be described using FIGS. 21 and 22. FIG. 21 shows acommand sequence corresponding to FIG. 16 and shows an input/outputsignal I/O input to the semiconductor storage device 10. FIG. 22 showswaveforms of the first and second write operations and shows a voltageapplied to the selected word line WL.

As shown in FIG. 21, in step S52, the controller 20 first sequentiallytransmits a command “01h”, a command “80h”, the address information ADDspecifying the word line WL0, the data DAT0 corresponding to the firstlower page data TL1, and a command “xyh” to the semiconductor storagedevice 10. When the command “xyh” is stored in a command register 12, asequencer 14 sets the ready/busy signal RBn to the “L” level andtransfers the write data retained in the latch circuit XDL to, forexample, the latch circuit ADL.

When the ready/busy signal RBn is set to the “H” level, the controller20 sequentially transmits a command “02h”, the command “80h”, theaddress information ADD specifying the word line WL0, the data DAT0corresponding to the first middle page data TM1, and the command “xyh”to the semiconductor storage device 10. When the command “xyh” is storedin the command register 12, the sequencer 14 sets the ready/busy signalRBn to the “L” level and transfers the write data retained in the latchcircuit XDL to, for example, the latch circuit BDL.

When the ready/busy signal RBn is set to the “H” level, the controller20 sequentially transmits a command “03h”, the command “80h”, theaddress information ADD specifying the word line WL0, the data DAT0corresponding to the first upper page data TU1, and a command “10h” tothe semiconductor storage device 10.

A group having from the above command “01h” to the command “10h”corresponds to the third command set. When the command “10h” is storedin the command register 12, the sequencer 14 sets the ready/busy signalRBn to the “L” level to transfer the write data retained in the latchcircuit XDL to, for example, the latch circuit CDL, and thus to executethe first write operation (step S53). The illustrated tProg (TLC)corresponds to a processing period of the first write operation. FIG. 22shows an example of a waveform in this first write operation. As shownin FIG. 22, the waveform in the first write operation in the presentembodiment is similar to the waveform in the first write operation shownin FIG. 12 described in the first embodiment.

After that, in step S57, the controller 20 issues the third command setincluding the address information ADD selecting the word line WL1 andthe data DAT1 and transmits the third command set to the semiconductorstorage device 10. When the command “10h” included in the third commandset is stored in the command register 12, the semiconductor storagedevice 10 executes the first write operation in which the word line WL1is selected (step S58).

After that, in step S60, the controller 20 sequentially transmits acommand “04h”, the command “80h”, the address information ADD specifyingthe word line WL0, the data DAT0 corresponding to the second single pagedata SL2, and the command “10h” to the semiconductor storage device 10.A group having from the command “04h” to the command “10h” correspondsto the fourth command set. When the command “10h” is stored in thecommand register 12, the sequencer 14 sets the ready/busy signal RBn tothe “L” level to transfer the write data retained in the latch circuitXDL to, for example, the latch circuit ADL, and thus to execute thesecond write operation (step S61). The illustrated tProg (QLC)corresponds to a processing period of the second write operation. FIG.22 shows an example of a waveform in this second write operation.

As shown in FIG. 22, the row decoder 16 first sequentially applies thevoltages M1R, M2R, M3R, M4R, M5R, M6R, and M7R to the selected word lineWL. This operation corresponds to IDL, and the sense amplifier module 17reads 3 page data stored in the memory cell transistor MT connected tothe selected word line WL. The read 3 page data is retained in, forexample, the latch circuits BDL, CDL, and DDL. Subsequently, thesequencer 14 repeats a program loop based on 4 page data retained in thelatch circuits ADL, BDL, CDL, and DDL. The program loop in the secondwrite operation is similar to the program loop in the second writeoperation described in the first embodiment with the use of FIG. 12.Also, since the program voltages in the first and second writeoperations and a magnitude relation of ΔVpgm are similar to those in thefirst embodiment, the description will be omitted.

When the sequencer 14 has passed verification according to the voltageVF, for example, the sequencer 14 ends the second write operation andsets the ready/busy signal RBn to the “H” level (step S64). Since stepS65 and subsequent operations shown in FIG. 21 are similar to the aboveoperations, the description will be omitted.

[2-3] Effects of Second Embodiment

According to the memory system 1 according to the present embodiment,the reliability of data can be improved more than in the firstembodiment. Hereinafter, the details of the effects of the secondembodiment will be described.

In the memory system 1 according to the present embodiment, as in thefirst embodiment, the controller 20 applies data processing includingcode conversion to write data received from the host apparatus 30. Inthe present embodiment, in the first write operation, the controller 20transmits the 3 page data to the semiconductor storage device 10, andthe semiconductor storage device 10 writes the 3 page data including thelower, middle, and upper bits after code conversion. Then, in the secondwrite operation, the controller 20 transmits 1 page data, including thetop bit after code conversion, to the semiconductor storage device 10,and the semiconductor storage device 10 writes data of four pages intotal in the memory cell, based on the 3 page data read from the memorycell by IDL and including the lower, middle, and upper bits after codeconversion and the 1 page data received from the controller 20 andincluding the top bit after code conversion.

Consequently, the memory system 1 according to the present embodimentcan execute write operation in which the 4 page data is writtendivisionally twice, as in the first embodiment. In the presentembodiment, since the 3 page data is written in the first writeoperation, by virtue of the subsequent second write operation, theinfluence of the initial drop of the threshold voltage occurring due todata writing corresponding to three bits and the influence of theparasitic capacitance between memory cells can be ignored in a thresholddistribution to be finally obtained. Accordingly, in the memory system 1according to the present embodiment, since a spread of the thresholddistribution in the memory cell can be suppressed more than in the firstembodiment, the reliability of data can be improved more than in thefirst embodiment.

In the memory system 1 according to the present embodiment, in thesecond write operation, data items of the lower, middle, and upper bitsafter code conversion written by the first write operation are restoredby being read from the memory cell by IDL. Namely, the controller 20 candiscard the 3 page data used in the first write operation aftertransmitting the 3 page data to the semiconductor storage device 10.

Consequently, the controller 20 can execute the above write operation ifthe capacitance of the RAM 22 is at least five pages. Namely, in thememory system 1 according to the present embodiment, since the capacityof the RAM 22 can be reduced, the circuit area of the controller 20 canbe reduced more than in the first embodiment.

[3] Third Embodiment

Next, a memory system 1 according to a third embodiment will bedescribed. In the memory system 1 according to the present embodiment,in the first write operation described in the first embodiment, thesemiconductor storage device 10 mixedly executes 2 bit data writing and3 bit data writing. Hereinafter, differences from the first and secondembodiments will be described.

[3-1] Write Operation of Memory System 1

<Regarding Flow of Write Operation>

Next, the write operation in the memory system 1 will be described. Inthe write operation in the memory system 1 according to the presentembodiment, a controller 20 applies various data processings to 4 pagedata received from the host apparatus 30, and three pages of this dataare first transferred to a semiconductor storage device 10. At thistime, the controller 20 maintains data corresponding to a high-orderpage of 3 page data after code conversion. The semiconductor storagedevice 10 then executes 2 page writing and further applies the firstwrite operation using 3 bit data to only data corresponding to a highestorder level of the two pages. After that, the controller 20 transmitsretaining 2 page data and applies the second write operation to the 2page data and 2 page data read by the semiconductor storage device 10through IDL.

Hereinafter, the details of the write operation in the memory system 1will be described using FIGS. 23 and 24. FIG. 23 shows a flow chart ofthe write operation in the memory system 1, and FIG. 24 shows an exampleof data retained by the RAM 22 and the sense amplifier unit SAU in eachstep shown in FIG. 23.

Steps S80 to S102 shown in FIG. 23 are operations similar to steps S10to S32 described in the first embodiment. Hereinafter, only differencesfrom FIG. 5 described in the first embodiment will be described indetail.

(Steps S80 and S81)

Steps S80 and S81 are similar to steps S10 and S11 described in thefirst embodiment, and the controller 20 applies code conversion to thereceived 4 page data DAT0.

(Step S82)

The controller 20 selects the word line WL0 and transmits the thirdcommand set, including the 3 page data DAT0, to the semiconductorstorage device 10. The 3 page data DAT0 of a command set received by thesemiconductor storage device 10 is transferred to a latch circuit of thesense amplifier unit SAU. Specifically, as shown in FIG. 24, data itemsretained in the regions PG0, PG1, and PG2 of the RAM 22 are transferredto the latch circuits ADL, BDL, and CDL of the sense amplifier unit SAU,respectively. Then, when the 3 page data DAT0 is transferred, the RAM 22clears data retained in the regions PG0 and PG1 and continues to retaindata retained in the region PG2.

(Step S83)

When the semiconductor storage device 10 receives the third command setfrom the controller 20, the semiconductor storage device 10 sets theready/busy signal RBn to the “L” level and executes the first writeoperation in which the word line WL0 is selected. FIG. 25 shows anoutline of the first write operation in the present embodiment. FIG. 25shows a change in threshold distribution of the memory cell according tothe first write operation. As shown in FIG. 25, in the first writeoperation, the semiconductor storage device 10 executes a 2 page writeoperation based on the first lower page data ML1 and the first upperpage data MU1 input from the controller 20 and the write operation usinga portion of the second lower page data ML2.

The threshold voltage of the memory cell transistor MT before executionof the first write operation is distributed at the “ER” level. In thefirst write operation, the sequencer 14 uses the voltages VM1, VM2, VM3,and VM4 as verify voltages.

In the present embodiment, the voltage VM1 is used when “11” (lowerbit/middle bit after code conversion) data is written, and the voltageVM1 is not less than the voltage V1 and less than the voltage V5. Thevoltage VM2 is a verify voltage used when “10” data is written, and thevoltage VM2 is not less than the voltage V5 and less than the voltageV9. The voltage VM3 is a verify voltage used when the “010” (lowerbit/middle bit/upper bit) data is written, and the voltage VM3 is notless than the voltage V9 and less than the voltage VD. The voltage VM4is a verify voltage used when the “011” data is written, and the voltageVM4 is not less than the voltage VD and less than the voltage VF. Asdescribed above, the write operation based on 2 bit data is applied todata corresponding to a low threshold voltage, and the write operationbased on 3 bit data is applied to data corresponding to a high thresholdvoltage.

When the first write operation is executed, the threshold voltage of thememory cell transistor MT rises based on data to be written, and fivethreshold distributions are formed. The “M0” level shown in FIG. 25 isformed by the memory cell transistors MT in which the “11” data iswritten. The “M1” level is formed by the memory cell transistors MT inwhich the “10” data is written. The “M2” level is formed by the memorycell transistors MT in which “00” data is written. The “M3” level isformed by the memory cell transistors MT in which the “010” data iswritten. The “M4” level is formed by the memory cell transistors MT inwhich the “011” data is written.

The “M0” level is less than the voltage V1, and as in the firstembodiment, the “M0” level corresponds to the erase state of the memorycell transistor MT. Namely, in the first write operation, the increasein threshold voltage is suppressed in the memory cell transistor MT inwhich the “11” data is written. A threshold voltage at the “M1” level isnot less than the voltage VM1 and less than the voltage V5. A thresholdvoltage at the “M2” level is not less than the voltage VM2 and less thanthe voltage V9. A threshold voltage at the “M3” level is not less thanthe voltage VM3 and less than the voltage VD. A threshold voltage at the“M4” level is not less than the voltage VM4 and less than the voltageVF.

As described above, the voltages VM1, VM2, VM3, and VM4 used inverification in the first write operation are set such that thethreshold voltage of the memory cell transistor MT having passedverification does not exceed the voltages V5, V9, VD, and VF,respectively.

In the above description, the case where verification according to thevoltage VM4 is executed in the first write operation has been describedas an example, but the present invention is not limited to this case.For example, the verification according to the voltage VM4 may not beexecuted. In this case, after the semiconductor storage device 10 haspassed verification according to the voltage VM3, the semiconductorstorage device 10 applies an arbitrary number of program pulses and endsthe first write operation.

(Steps S84 to S86)

Steps S84 to S86 are similar to steps S14 to S16 described in the firstembodiment, and the controller 20 applies code conversion to thereceived 4 page data DAT1.

(Step S87)

The controller 20 selects the word line WL1 and transmits the thirdcommand set, including the 3 page data DAT1, to the semiconductorstorage device 10. The 3 page data DAT0 of a command set received by thesemiconductor storage device 10 is transferred to the latch circuit ofthe sense amplifier unit SAU. Specifically, as shown in FIG. 24, dataitems retained in the regions PG0, PG1, and PG4 of the RAM 22 aretransferred to the latch circuits ADL, BDL, and CDL of the senseamplifier unit SAU, respectively. Then, when the 3 page data DAT1 istransferred, the RAM 22 clears data retained in the regions PG0 and PG1and continues to retain data retained in the region PG4.

(Steps S88 and S89)

As in step S83, the semiconductor storage device 10 executes the firstwrite operation, based on the third command set selecting the word lineWL1 and including the 3 page data DAT1.

(Step S90)

The controller 20 selects the word line WL0 and transmits the secondcommand set, including the 2 page data DAT0, to the semiconductorstorage device 10. The 2 page data DAT0 of a command set received by thesemiconductor storage device 10 is transferred to the latch circuit ofthe sense amplifier unit SAU. Specifically, as shown in FIG. 24, thedata items retained in the regions PG2 and PG3 of the RAM 22 aretransferred respectively to the latch circuits ADL and BDL of the senseamplifier unit SAU. Then, when the 2 page data DAT0 is transferred, theRAM 22 clears data retained in the regions PG2 and PG3.

(Step S91)

When the semiconductor storage device 10 receives the second command setfrom the controller 20, the semiconductor storage device 10 sets theready/busy signal RBn to the “L” level and executes the second writeoperation in which the word line WL0 is selected. FIG. 26 shows anoutline of the second write operation in the present embodiment. FIG. 26shows a change in threshold distribution of the memory cell according tothe second write operation. As shown in FIG. 26, in the second writeoperation in the present embodiment, the semiconductor storage device 10first executes internal data load (IDL).

In IDL in the present embodiment, the sense amplifier module 17 executesread operation using the voltages M1R, M2R, and M3R. The voltages M1R,M2R, and M3R in the present embodiment are similar to the voltages M1R,M2R, and M3R described in the first embodiment with the use of FIG. 10.

Consequently, the “11” data, the “10” data, the “00” data, and the “01”data written by the first write operation are restored in the latchcircuit in the sense amplifier module SAU. Specifically, as shown inFIG. 24, the first lower page data ML1 and the first upper page data MU1of the data DAT0 are transferred to the latch circuits CDL and DDL,respectively.

The semiconductor storage device 10 executes 4 page write operationbased on the first lower page data ML1 and the first upper page data MU1read by IDL and the second lower page data ML2 and the second upper pagedata MU2 input from the controller 20.

In the second write operation, the sequencer 14 uses the voltages V1,V2, V3, V4, V5, V6, V7, V8, V9, VA, VB, VC, VD, VE, and VF as verifyvoltages, as in the first embodiment. When the second write operation isexecuted, the threshold voltage of the memory cell transistor MT risesbased on data to be written, and 16 threshold distributions are formedfrom five levels. For example, the threshold distributions at the “0”level, the “1” level, the “2” level, and the “3” level are formed fromthe threshold distribution at the “M0” level. The thresholddistributions at the “4” level, the “5” level, the “6” level, and the“7” level are formed from the threshold distribution at the “M1” level.The threshold distributions at the “8” level, the “9” level, the “A”level, and the “B” level are formed from the threshold distribution atthe “M2” level. The threshold distributions at the “C” level and the “D”level are formed from the threshold distribution at the “M3” level. Thethreshold distributions at the “E” level and the “F” level are formedfrom the threshold distribution at the “M4” level.

(Steps S92 to S94)

As in steps S22 to S24 described in the first embodiment, while thefirst write operation in step S91 is executed, the controller 20 appliescode conversion to the received 4 page data DAT2. On the other hand,when the first write operation in step S91 is ended, the semiconductorstorage device 10 sets the ready/busy signal RBn to the “H” level andnotifies the controller 20 of the end of the write operation.

(Steps S95 to S97)

As in steps S82 to 84, the semiconductor storage device 10 executes thefirst write operation, based on the third command set selecting the wordline WL2 and including the 3 page data DAT2.

(Step S98)

The controller 20 selects the word line WL1 and transmits the secondcommand set, including the 2 page data DAT1, to the semiconductorstorage device 10. The 2 page data DAT1 of a command set received by thesemiconductor storage device 10 is transferred to the latch circuit ofthe sense amplifier unit SAU. Specifically, as shown in FIG. 24, thedata items retained in the regions PG4 and PG5 of the RAM 22 aretransferred respectively to the latch circuits ADL and BDL of the senseamplifier unit SAU. Then, when the 2 page data DAT0 is transferred, theRAM 22 clears data retained in the regions PG4 and PG5.

(Step S99)

As in step S91, the semiconductor storage device 10 executes the firstwrite operation, based on the third command set selecting the word lineWL1 and including the 2 page data DAT2. Specifically, the semiconductorstorage device 10 executes 4 page write operation based on the firstlower page data ML1 and the first upper page data MU1 read by IDL andthe second lower page data ML2 and the second upper page data MU2 inputfrom the controller 20.

(Steps S100 and S101)

Steps S100 and S101 are similar to steps S30 and S31 described in thefirst embodiment, and the controller 20 applies code conversion to thereceived 4 page data DAT3.

(Step S102)

When the second write operation in step S99 is ended, the semiconductorstorage device 10 sets the ready/busy signal RBn to the “H” level andnotifies the controller 20 of the end of the write operation. Further,when the second write operation is ended, the latch circuit in the senseamplifier unit SAU is cleared as shown in FIG. 24.

In the subsequent operation, operation similar to steps S87 to S102 isrepeated. When the second write operation corresponding to the last 4page data is ended, the memory system 1 ends the write operation.

<Regarding Command Sequence>

Next, a command sequence in the above write operation will be describedusing FIG. 27. FIG. 27 shows a command sequence corresponding to FIG. 23and shows the input/output signal I/O input to the semiconductor storagedevice 10.

As shown in FIG. 27, relative to the third command set described usingFIG. 21 in the second embodiment, the third command set in the presentembodiment is similar to a command set in which data of a first page isreplaced by the first lower page data ML1, data of a second page isreplaced by the first upper page data MU1, and data of a third page isreplaced by the second lower page data ML2. The second command set inthe present embodiment is similar to the second command set described inthe first embodiment with the use of FIG. 11. An illustrated tProg(MLC+) corresponds to a processing period of the first write operationaccording to the present embodiment and is longer than tProg(MLC) in thefirst embodiment and shorter than tProg(QLC) in the first embodiment.Since those detailed command sequences are similar to the commandsequences described in the first and second embodiments, the descriptionwill be omitted.

[3-2] Effects of Third Embodiment

According to the memory system 1 according to the present embodiment,the reliability of data can be improved more than in the firstembodiment. Hereinafter, the details of the effects of the thirdembodiment will be described.

In the memory system 1 according to the present embodiment, as in thefirst embodiment, the controller 20 applies data processing includingcode conversion to write data received from the host apparatus 30. Inthe present embodiment, in the first write operation, the controller 20transmits the 3 page data to the semiconductor storage device 10. Thesemiconductor storage device 10 performs writing with the use of 2 bitdata in data in which the threshold voltage corresponds to a low leveland performs writing with the use of 3 bit data in data in which thethreshold voltage corresponds to a high level.

Specifically, in the 2 page data constituted of the first lower page ML1and the first upper page MU1 of 3 page data received by thesemiconductor storage device 10 in the first write operation, the data“11”, “10”, and “00” in which the threshold voltage is low and the data“01” in which the threshold voltage is high are classified. The data“01” in which the threshold voltage is high is classified into two dataitems “010” and “011” with the use of data of the second lower page ML2.

The semiconductor storage device 10 forms three threshold distributionsby 2 bit data writing using the data “11”, “10”, and “00” and forms twothreshold distributions by 3 bit data writing using the data “010” and“011” in which the threshold voltage is high. As described above, in thefirst write operation in the present embodiment, the 2 bit data writingand the 3 bit data writing are mixedly executed.

Then, in the second write operation, the controller 20 transmits 2 pagedata to the semiconductor storage device 10, and the semiconductorstorage device 10 writes data of four pages in total in the memory cell,based on the 2 page data read from the memory cell by IDL and includingthe lower and middle bits after code conversion and the 2 page datareceived from the controller 20 and including the upper and top bitsafter code conversion.

Consequently, the memory system 1 according to the present embodimentcan execute write operation in which the 4 page data is writtendivisionally twice, as in the first embodiment. In the presentembodiment, in the first write operation, data corresponding to a highlevel threshold distribution is written by three bits. In such a levelthat a variation of the threshold voltage is largest, since an initialdrop amount of the threshold voltage and the parasitic capacitance withrespect to an adjacent memory cell are greatly influenced, the effect ofignoring these influences is increased by the second write operation.Accordingly, in the memory system 1 according to the present embodiment,since a spread of the threshold distribution in the memory cell can besuppressed more than in the first embodiment, the reliability of datacan be improved more than in the first embodiment.

[4] Fourth Embodiment

Next, a memory system 1 according to a fourth embodiment will bedescribed. In the memory system 1 according to the present embodiment,in the first write operation described in the first embodiment, thesemiconductor storage device 10 executes 3 bit data writing.Hereinafter, differences from the first to third embodiments will bedescribed.

[4-1] Write Operation of Memory System 1

<Regarding Flow of Write Operation>

Next, the write operation in the memory system 1 will be described. Inthe write operation in the memory system 1 according to the presentembodiment, a controller 20 applies various data processings to 4 pagedata received from the host apparatus 30, and three pages of this dataare first transferred to a semiconductor storage device 10. At thistime, the controller 20 maintains data corresponding to a high-orderpage of 3 page data. The semiconductor storage device 10 then executesthe first write operation using 3 bit data. After that, the controller20 transmits the retained 2 page data and applies the second writeoperation to the 2 page data and 2 page data read by the semiconductorstorage device 10 through IDL.

Hereinafter, the details of the write operation in the memory system 1will be described using FIGS. 28 and 29. FIG. 28 shows a flow chart ofthe write operation in the memory system 1, and FIG. 29 shows an exampleof data retained by the RAM 22 and the sense amplifier unit SAU in eachstep shown in FIG. 28.

Steps S110 to S132 shown in FIG. 28 are similar to steps S80 to S102described in the third embodiment and differ in the details of the firstand second write operations. In the drawing shown in FIG. 29, relativeto FIG. 24 described in the third embodiment, 4 bit data DAT after dataprocessing using the controller 20 is replaced by a first lower pagedata TL1, a first middle page data TM1, a first upper page data TU1, anda second single page data SL2. Thus, the details of the first and secondwrite operations in the present embodiment will be described.

(First Write Operation)

When the semiconductor storage device 10 receives a third command setfrom the controller 20 in step S113, for example, the semiconductorstorage device 10 sets a ready/busy signal RBn to an “L” level andexecutes the first write operation in which a word line WL0 is selected.FIG. 30 shows an outline of the first write operation in the presentembodiment. FIG. 30 shows a change in threshold distribution of thememory cell according to the first write operation. As shown in FIG. 30,in the first write operation, the semiconductor storage device 10executes a 3 page write operation based on the first lower page dataTL1, the first middle page data TM1, and the first upper page data TU1input from the controller 20. FIG. 30 differs from FIG. 19 described inthe second embodiment in a value of a verify voltage.

A voltage VM1 is set such that the threshold voltage of the memory celltransistor MT having passed verification does not exceed a voltage V3. Avoltage VM2 is less than a voltage VM3, and the voltages VM2 and VM3 areset such that the threshold voltage of the memory cell transistor MThaving passed verification does not exceed a voltage V7. A voltage VM4is less than a voltage VM5, and the voltages VM4 and VM5 are set suchthat the threshold voltage of the memory cell transistor MT havingpassed verification does not exceed a voltage VB. A voltage VM6 is lessthan a voltage VM7, and the voltages VM6 and VM7 are set such that thethreshold voltage of the memory cell transistor MT having passedverification does not exceed a voltage VF. Since the others are similarto FIG. 19 described in the second embodiment, the description will beomitted.

(Second Write Operation)

When the semiconductor storage device 10 receives a second command setfrom the controller 20 in step S121, for example, the semiconductorstorage device 10 sets the ready/busy signal RBn to the “L” level andexecutes the second write operation in which the word line WL0 isselected. FIG. 31 shows an outline of the second write operation in thepresent embodiment. FIG. 31 shows a change in threshold distribution ofthe memory cell according to the second write operation. As shown inFIG. 31, in the second write operation in the present embodiment, thesemiconductor storage device 10 first executes internal data load (IDL).

In IDL in the present embodiment, a sense amplifier module 17 executesread operation using voltages M2R, M4R, and M6R. In the voltages M2R,M4R, and M6R in the present embodiment, the voltage M2R is not less thanthe voltage V3 and not more than the voltage VM2, and a sense amplifierpart SA determines whether or not the threshold voltage of the memorycell transistor MT is less than a voltage M1R through the read operationusing the voltage M2R. The voltage M4R is not less than the voltage V7and not more than the voltage VM4, and the sense amplifier part SAdetermines whether or not the threshold voltage of the memory celltransistor MT is less than the voltage M2R through the read operationusing the voltage M4R. The voltage M6R is not less than the voltage VBand not more than the voltage VM6, and the sense amplifier part SAdetermines whether or not the threshold voltage of the memory celltransistor MT is less than the voltage M3R through the read operationusing the voltage M6R.

Consequently, the “11” data, the “10” data, the “00” data, and the “01”data written by the first write operation are restored in the latchcircuit in the sense amplifier module SAU. Specifically, as shown inFIG. 29, the first lower page data TL1 and the first middle page dataTM1 of the data DAT0 are transferred to, for example, the latch circuitsCDL and DDL, respectively.

The semiconductor storage device 10 executes 4 page write operationbased on the first lower page data TL1 and the first middle page dataTM1 read by IDL and the first upper page data TL1 and the second singlepage data SL2 input from the controller 20.

In the second write operation, the sequencer 14 uses the voltages V1,V2, V3, V4, V5, V6, V7, V8, V9, VA, VB, VC, VD, VE, and VF as verifyvoltages, as in the first embodiment. When the second write operation isexecuted, the threshold voltage of the memory cell transistor MT risesbased on data to be written, and 16 threshold distributions are formedfrom eight levels. For example, the threshold distributions at a “0”level and a “1” level are formed from the threshold distribution at an“M0” level. The threshold distributions at a “2” level and a “3” levelare formed from the threshold distribution at an “M1” level. Thethreshold distributions at a “4” level and a “5” level are formed fromthe threshold distribution at an “M2” level. The threshold distributionsat a “6” level and a “7” level are formed from the thresholddistribution at an “M3” level. The same applies hereinafter.

<Regarding Command Sequence>

Next, a command sequence in the above write operation will be describedusing FIG. 32. FIG. 32 shows a command sequence corresponding to FIG. 28and shows an input/output signal I/O input to the semiconductor storagedevice 10.

As shown in FIG. 32, the third command set in the present embodiment issimilar to the third command set described in the second embodiment withthe use of FIG. 21. Relative to the second command set described usingFIG. 11 in the first embodiment, the second command set in the presentembodiment is similar to a command set in which data DAT of a first pageis replaced by the first upper page data TU1, and the data DAT of asecond page is replaced by the second single page data SL2. Since thosedetailed command sequences are similar to the command sequencesdescribed in the first and second embodiments, the description will beomitted.

[4-2] Effects of Fourth Embodiment

According to the memory system 1 according to the present embodiment,the reliability of data can be improved more than in the firstembodiment. Hereinafter, the details of the effects of the fourthembodiment will be described.

In the memory system 1 according to the present embodiment, as in thefirst embodiment, the controller 20 applies data processing includingcode conversion to write data received from the host apparatus 30. Inthe present embodiment, in the first write operation, the controller 20transmits the 3 page data to the semiconductor storage device 10, andthe semiconductor storage device 10 writes the 3 page data including thelower, middle, and upper bits after code conversion. Then, in the secondwrite operation, the controller 20 transmits 2 page data to thesemiconductor storage device 10, and the semiconductor storage device 10writes data of four bits in total, based on the 2 page data receivedfrom the controller 20 and including the upper and top bits after codeconversion and the 2 page data read by IDL and including the lower andmiddle bits after code conversion.

As described above, the memory system 1 according to the presentembodiment executes write operation in which the 4 page data is writtendivisionally twice, as in the first embodiment. In the presentembodiment, since the 3 bit data is written in the first write operationas in the second embodiment, by virtue of the subsequent second writeoperation, the influence of the initial drop of the threshold voltageoccurring due to data writing corresponding to three bits and theinfluence of the parasitic capacitance between memory cells can beignored in a threshold distribution to be finally obtained. Accordingly,the memory system 1 according to the present embodiment can improve thereliability of data as in the second embodiment.

In the memory system 1 according to the present embodiment, in thesecond write operation, among the lower, middle, and upper bits aftercode conversion written by the first write operation, only data items ofthe lower and upper bits are restored by IDL, and data of the upper bitis obtained by being received from the controller 20. Since a timeduring which data corresponding to one page is re-received from thecontroller 20 is shorter than a time during which data of the upper bitstored in the memory cell is read by IDL, the write speed in the memorysystem 1 according to the present embodiment can be accelerated ascompared with the second embodiment.

The verify voltages in the present embodiment may be set such that amargin is generated each between the “M1” level and the “M2” level,between the “M3” level and the “M4” level, and between the “M5” leveland the “M6” level. As described above, it is possible to reduce thenumber of error bits occurring when IDL of the 2 bit data is executed inthe second read operation.

[5] Fifth Embodiment

Next, a memory system 1 according to the fifth embodiment will bedescribed. In a semiconductor storage device 10 in the presentembodiment, each block BLK of a memory cell array 11 includes aplurality of string units. A controller 20 issues instructions for foggyprogram operation and fine program operation with respect to each stringunit to the semiconductor storage device 10 in a predetermined order.Hereinafter, differences from the first to fourth embodiments will bedescribed.

[5-1] Configuration of Memory System 1

First, a configuration of the memory system 1 will be described usingFIG. 33. FIG. 33 is a block diagram of a RAM 22 of the controller 20.

As shown in FIG. 33, the RAM 22 includes page clusters CL0 to CL4. Eachpage cluster CL includes regions PG0 to PG3. Namely, the page clustersCL0 to CL4 each can hold 4 pages data. The storage capacity of the pagecluster CL is not limited to 4 pages and may be 2 pages, 3 pages, or notless than 5 pages.

Next, a configuration of the memory cell array 11 will be describedusing FIG. 34. FIG. 34 is a circuit diagram of the memory cell array 11and shows a detailed circuit configuration of one of the blocks BLK inthe memory cell array 11. The circuit configuration of the memory cellarray 11 in this embodiment is different from the circuit configurationof the memory cell array 11 described using FIG. 2 in the firstembodiment in that a plurality of string units SU are provided in eachof the blocks BLK.

The block BLK comprises, for example, string units SU0 to SU3, as shownin FIG. 34. Each of the string units SU includes m NAND strings 18. Theconfiguration of the NAND string 18 is similar to that described usingFIG. 2 in the first embodiment.

Gates of select transistors ST1 in the string units SU0 to SU3 arecommonly connected to select gate lines SGD0 to SGD 3, respectively.Drains of the select transistors ST1 on the same column in the sameblock are commonly connected to the corresponding bit line BL. Namely,the drains of the select transistors ST1 on the same column are commonlyconnected between the blocks BLK. Control gates of memory transistorsMT0 to MT7 in the same block are commonly connected respectively to wordlines WL0 to WL7. Gates of select transistors ST2 in the same block arecommonly connected to select gate lines SGS. Sources of selecttransistors ST2 in the same block are commonly connected to a sourceline SL. Namely, the sources of the select transistors ST2 are commonlyconnected between the blocks BLK. Other configurations are similar tothe first embodiment, and therefore description thereof is omitted.

[5-2] Write Operation of Memory System 1

<Regarding Flow of Write Operation>

Next, the write operation of the memory system 1 will be described. Inthe write operation in the memory system 1 according to the presentembodiment, writing of 4 pages data is divisionally executed twice, oncewith foggy program operation, and once with fine program operation. Thefoggy program operation and the fine program operation are each executedbased on write data of four pages. Details of these program operationswill be described later.

Hereinafter, details of the write operation of the memory system 1 willbe described using FIG. 35. FIG. 35 is a flow chart of the writeoperation of the memory system 1. The following write operation will bedescribed, taking as an example a case where a 4-4-3-4 code is appliedto write data. In the following description, variables i and j are usedfor ease of explanation. The variables i and j are held by a counter ofthe controller 20, for example, and incremented by control from thecontroller 20.

As shown in FIG. 35, first, the semiconductor storage device 10 executesthe foggy program operation in which a word line WLi (i=0) is selected,and the string units SU0 to SU3 are selected in sequence (step S200).FIG. 36 shows details of the foggy program operation. FIG. 36 shows achange in threshold distribution of a memory cell according to the foggyprogram operation.

As shown in FIG. 36, the semiconductor storage device 10 executes thefoggy program operation based on the 4 pages data input from thecontroller 20.

A threshold voltage of the memory cell transistor MT before execution ofthe foggy program operation is distributed at an “ER” level. Thethreshold voltage at the “ER” level is less than a voltage V1, and as inthe “0” level described above, the threshold voltage at the “ER” levelcorresponds to an erase state of the memory cell transistor MT.

In the foggy program operation, a sequencer 14 uses voltages VM1, VM2,VM3, VM4, VM5, VM6, VM7, VM8, VM9, VMA, VMB, VMC, VMD, VME, and VMF asverify voltages. The voltages VM1, VM2, VM3, VM4, VM5, VM6, VM7, VM8,VM9, VMA, VMB, VMC, VMD, VME, and VMF are used respectively when “1111”(“lower bit/middle bit/upper bit/top bit”) data, “0111” data, “0101”data, “0001” data, “1001” data, “1000” data, “0000” data, “0100” data,“0110” data, “0010” data, “0011” data, “1011” data, “1010” data, “1110”data, “1100” data, and “1101” data are written. The voltage VM1 is lessthan the voltage V1. The voltage VM2 is not less than the voltage V1 andless than the voltage V2. The voltage VM3 is not less than the voltageV2 and less than the voltage V3. The same applies hereinafter.

When the foggy program operation is executed, the threshold voltage ofthe memory cell transistor MT increases based on data to be written, and16 threshold distributions are formed. As shown in FIG. 36, the 16threshold distributions sometimes overlap the adjacent thresholdvoltages. An “M0” level shown in FIG. 36 is formed by the memory celltransistors MT in which “1111” data is written. An “M1” level is formedby the memory cell transistors MT in which “0111” data is written. An“M2” level is formed by the memory cell transistors MT in which “0101”data is written. The same applies hereinafter.

The threshold voltage at the “M0” level is less than the voltage V1, andas in the “0” level and the “ER” level described above, the thresholdvoltage at the “M0” level corresponds to the erase state of the memorycell transistor MT. Namely, in the first program operation, the increasein threshold voltage is suppressed in the memory cell transistor MT inwhich the “1” data is written. A threshold voltage at the “M1” level isnot less than the voltage VM1 and less than the voltage V2. A thresholdvoltage at the “M2” level is not less than the voltage VM2 and less thanthe voltage V3. The same applies hereinafter.

Thus, the voltages VM1, VM2, VM3, VM4, VM5, VM6, VM7, VM8, VM9, VMA,VMB, VMC, VMD, VME, and VMF used in verification in the foggy programoperation are set such that the threshold voltage of the memory celltransistor MT having passed verification does not exceed the voltagesV2, V3, V4, V5, V6, V7, V8, V9, VA, VB, VC, VD, VE, VF, and VREAD,respectively.

Returning to FIG. 35, when the foggy program operation in step S200 isended, the variable i is incremented, and the variable j is reset (j=0)(step S201). Then, the semiconductor storage device 10 executes thefoggy program operation in which the word line WLi is selected, and astring unit SUj is selected (step S202). Specifically, the semiconductorstorage device 10 executes the foggy program operation in which the wordline WL1 is selected, and the string unit SU0 is selected.

Next, the semiconductor storage device 10 executes the fine programoperation in which a word line WL(i−1) is selected, and the string unitSUj is selected (step S203). Specifically, the semiconductor storagedevice 10 executes the fine program operation in which the word line WL0is selected, and the string unit SU0 is selected. FIG. 37 shows detailsof the fine program operation. FIG. 37 shows a change in thresholddistribution of the memory cell according to the fine program operation.

As shown in FIG. 37, the semiconductor storage device 10 executes thefine program operation based on the 4 pages data input from thecontroller 20.

In the fine program operation, as in the foggy program operation, thesequencer 14 uses voltages V1, V2, V3, V4, V5, V6, V7, V8, V9, VA, VB,VC, VD, VE, and VF as verify voltages. When the fine program operationis executed, the threshold voltage of the memory cell transistor MTincreases based on data to be written, and 16 thin thresholddistributions are formed from 16 wide threshold distributions. Forexample, a threshold distribution at the “0” level is formed from athreshold distribution at the “M0” level, a threshold distribution at a“1” level is formed from a threshold distribution at the “M1” level, anda threshold distribution at a “2” level is formed from a thresholddistribution at the “M2” level. The same applies hereinafter.

Returning to FIG. 35, when j=3 is not satisfied once the fine programoperation in step S203 is ended (step S204, No), the variable j isincremented (step S205), and step S202 and subsequent operations arerepeated. On the other hand, when j=3 (step S204, Yes), the value of thevariable i is continuously confirmed (step S206).

When i=7 is not satisfied (step S206, No), the operation returns to stepS201. After the variable i is incremented, and, at the same time, thevariable j is reset, step S202 and subsequent operations are repeated.On the other hand, when i=7 (step S206, Yes), the semiconductor storagedevice 10 executes the fine program operation in which a word line WLi(i=7) is selected, and the string units SU0 to SU3 are selected insequence (step S207).

FIG. 38 shows a writing order in each program operation described above.FIG. 38 shows combinations of the word lines WL and the string units SUin a certain block BLK. FIG. 38 further shows a frame (background:white) corresponding to the foggy program operation and a frame(background: diagonal lines) corresponding to the fine program operationin each combination and displays, in each frame, the number representingthe order for executing the operation. The dashed arrows shown in FIG.38 show that four page write data retained in any of the page clustersCL is cleared from the inside of the controller 20 according to theoperation at the start point of the arrow, and a memory region of theRAM 22 is released.

As shown in FIG. 38, the semiconductor storage device 10 executes thefoggy program operation with respect to each of the string units SU, inwhich the word line WL0 is selected, and then alternately executes thefoggy program operation in which the word line WL1 is selected and thefine program operation in which the word line WL0 is selected. Thisoperation is executed such that the string units SU0 to SU3 are selectedin sequence. The memory system 1 executes the fine program operation inwhich the word line WL0 and the string unit SU3 are selected and thenalternately executes the foggy program operation in which the word lineWL2 is selected and the fine program operation in which the word lineWL1 is selected. The same applies hereinafter.

In such a write operation, for example, the 4 pages data to be writtento the memory cell corresponding to the word line WL0 and the stringunit SU0 is retained in the regions PG0 to PG3 of the page cluster CL0.The 4 pages data is cleared from the controller 20 after the controller20 instructs the fine program operation with respect to the word lineWL0 and the string unit SU0, and the memory region in the RAM 22 isreleased. Namely, the RAM 22 retains the 4 pages data, which is to bewritten to the memory cell corresponding to the word line WL0 and thestring unit SU0, in the page cluster CL0 until the first operation shownin FIG. 38 to the sixth operation are executed. During this period, theRAM 22 retains the 4 pages data, which are to be used in the second tofifth operations, for example, in the page clusters CL1 to CL4.

<Regarding Command Sequence>

Next, details of command sequences and waveforms in the above writeoperations will be described using FIGS. 39 to 41. FIGS. 39 and 40 showrespective command sequences in the foggy program operation and the fineprogram operation and show an input/output signal I/O input to thesemiconductor storage device 10. FIG. 41 shows the waveforms of thefoggy program operation and the fine program operation and shows avoltage applied to the selected word line WL.

First, the command sequence of the foggy program operation will bedescribed. In the following description, a combination of commands shownin FIG. 39 is referred to as a fifth command set.

As shown in FIG. 39, in the foggy program operation the controller 20first transmits a command “xzh” to the semiconductor storage device 10.The command “xzh” is a command instructing the semiconductor storagedevice 10 to execute the foggy program operation. The controller 20 thentransmits a command “01h”, a command “80h”, address information ADD,lower page data DAT1, and a command “xyh” to the semiconductor storagedevice 10 in sequence. When the command “xyh” is stored in a commandregister 12, a sequencer 14 sets a ready/busy signal RBn to an “L” levelto transfer write data retained in a latch circuit XDL to, for example,a latch circuit ADL.

When the ready/busy signal RBn is set to an “H” level, the controller 20transmits the command “xzh”, a command “02h”, the command “80h”, theaddress information ADD, middle page data DAT2, and the command “xyh” tothe semiconductor storage device 10 in sequence. When the command “xyh”is stored in the command register 12, the sequencer 14 sets theready/busy signal RBn to the “L” level to transfer the write dataretained in the latch circuit XDL to, for example, a latch circuit BDL.

When the ready/busy signal RBn is set to the “H” level, the controller20 transmits the command “xzh” a command “03h”, the command “80h”, theaddress information ADD, upper page data DAT3, and the command “xyh” tothe semiconductor storage device 10 in sequence. When the command “xyh”is stored in the command register 12, the sequencer 14 sets theready/busy signal RBn to the “L” level to transfer the write dataretained in the latch circuit XDL to, for example, a latch circuit CDL.

When the ready/busy signal RBn is set to the “H” level, the controller20 transmits the command “xzh” a command “04h”, the command “80h”, theaddress information ADD, top page data DAT4, and a command “10h” to thesemiconductor storage device 10 in sequence.

When the command “10h” is stored in the command register 12, thesequencer 14 sets the ready/busy signal RBn to the “L” level to transferthe write data retained in the latch circuit XDL to, for example, alatch circuit DDL, and thus to execute the foggy program operation. Theillustrated tProg (Foggy) corresponds to a processing period of thefoggy program operation. FIG. 41 shows an example of the waveform of thefoggy program operation. As shown in FIG. 41, the waveform of the foggyprogram operation is similar to the waveform of the first programoperation described using FIG. 12 in the first embodiment, and thereforedescription thereof is omitted.

Next, the command sequence of the fine program operation will bedescribed. In the following description, a combination of commands shownin FIG. 40 is referred to as a sixth command set.

As shown in FIG. 40, the command sequence of the fine program operationis similar to the command sequence of the foggy program operationdescribed using FIG. 39, except that the command “xzh” is removed.

When the command “10h” as the last command shown in FIG. 40 is stored inthe command register 12, the sequencer 14 sets the ready/busy signal RBnto the “L” level to execute the fine program operation. The illustratedtProg (Fine) corresponds to a processing period of the fine programoperation. tProg (Fine) is longer than tProg (Foggy). FIG. 41 shows anexample of the waveform of the fine program operation. As shown in FIG.41, the waveform of the fine program operation is similar to thewaveform of the second program operation described using FIG. 12 in thefirst embodiment, except that the waveform corresponding to the internaldata load (IDL) is removed, and therefore description thereof isomitted.

As described above, in the foggy program operation and the fine programoperation, the fifth and sixth command sets are used, respectively.Accordingly, the operation described using FIG. 35 is achieved by thecommand sequence shown in FIG. 42. FIG. 42 shows a command sequencecorresponding to the operation described using FIG. 35 and shows theinput/output signal I/O input to the semiconductor storage device 10.

As shown in FIG. 42, the controller 20 first transmits the fifth commandset in which the word line WL0 and each of the string units SU areselected to the semiconductor storage device 10 and makes thesemiconductor storage device 10 execute, in sequence, the foggy programoperation in which the word line WL0 and each of the string units SU areselected (step S201).

When the foggy program operation in which the word line WL0 is selectedis ended, the controller 20 transmits the fifth command set in which theword line WL1 and the string unit SU0 are selected to the semiconductorstorage device 10 and makes the semiconductor storage device 10 executethe foggy program operation in which the word line WL1 and the stringunit SU0 are selected (step S202).

When the foggy program operation in which the word line WL1 and thestring unit SU0 are selected is ended, the controller 20 transmits thesixth command set in which the word line WL0 and the string unit SU0 areselected to the semiconductor storage device 10 and makes thesemiconductor storage device 10 execute the fine program operation inwhich the word line WL0 and the string unit SU0 are selected (stepS203).

Although description of the subsequent command sequence is omitted, asshown in FIG. 42, the controller 20 appropriately selects a suitablecommand set and instructs the semiconductor storage device 10 to executevarious program operations.

[5-3] Effects of Fifth Embodiment

The memory system 1 according to the present embodiment can control thestorage capacity of the RAM 22. Hereinafter, the details of the effectsof fifth embodiment will be described.

There has been known a method of writing data of a plurality of bits toa memory cell while the program operation is divisionally executedtwice, once with the foggy program operation, and once with the fineprogram operation. In both the foggy program operation and the fineprogram operation, the data of a plurality of bits to be written to thememory cell is used. When such a writing method is applied to a memorysystem in which each of the blocks BLK comprises the string units SU, asthe writing order in the foggy program operation and the fine programoperation, the order shown in FIG. 43 is considered.

In a comparative example (first comparative example) of the fifthembodiment shown in FIG. 43, after the foggy program operation in whichthe word line WL0 and each of the string units SU are selected, thefoggy program operation in which the word line WL1 and each of thestring units SU are selected is executed. After the foggy programoperation in which the word line WL1 and each of the string units SU areselected is executed, the fine program operation in which the word lineWL0 and each of the string units SU are selected is executed. Namely, ina memory system in the first comparative example, the order forexecuting the foggy program operation and the fine program operation ismanaged in the unit of word line WL.

On the other hand, in this embodiment, as shown in FIG. 38, after thefoggy program operation in which the word line WL0 and each of thestring units SU are selected, the foggy program operation in which theword line WL1 and the string unit SU0 are selected is executed. Afterthe foggy program operation in which the word line WL1 and the stringunit SU0 are selected is executed, the fine program operation in whichthe word line WL0 and the string unit SU0 are selected is executed. Asdescribed above, in this embodiment, the memory system 1 sequentiallyexecutes the fine program operation from the string unit SU in which thefoggy program operation with respect to the adjacent word line WL isended.

From the above, in this embodiment and the first comparative example,the minimum required storage capacity of the RAM 22 is one shown in FIG.44. FIG. 44 shows an example of the configuration of the RAM 22 in eachof this embodiment and the first comparative example.

As shown in FIGS. 43 and 44, in the first comparative example, the RAM22 clears four page write data, which is to be written to the memorycell corresponding to the word line WL0 and the string unit SU0,according to the ninth operation and releases the memory region (forexample, the page cluster CL0). Considering the fact that the RAM 22retains four page write data in the second to eighth operations at thistime, the minimum required storage capacity of the RAM 22 in the firstcomparative example is 32 pages (corresponding to eight page clustersCL).

On the other hand, as shown in FIGS. 38 and 44, in this embodiment, theRAM 22 clears the four page write data, which is to be written to thememory cell corresponding to the word line WL0 and the string unit SU0,according to the sixth operation and releases the memory region (forexample, the page cluster CL0). Considering the fact that the RAM 22retains four page write data in the second to fifth operations at thistime, the minimum required storage capacity of the RAM 22 in thisembodiment is 20 pages (corresponding to five page clusters CL).

As described above, in the program operation in the memory system 1according to this embodiment, when the period by which the fine programoperation is executed is reduced, the period during which the RAM 22retains write data is reduced, and therefore, the consumption of the RAM22 can be controlled. Consequently, the memory system 1 according tothis embodiment can control the storage capacity of the RAM 22.

The writing order where the period by which the fine program operationis executed is reduced may be the order shown in FIG. 45. In a variation(first variation) of the fifth embodiment shown in FIG. 45, after thefoggy program operation in which the word line WL0 and the string unitSU0 are selected, the foggy program operation in which the word line WL1and the string unit SU0 are selected is executed. After the foggyprogram operation in which the word line WL1 and the string unit SU0 areselected is executed, the fine program operation in which the word lineWL0 and the string unit SU0 are selected is executed. The writing ordercontinues until the fine program operation in which the word line WL0and the string unit SU3 are selected is executed, the subsequent writingorder is similar to FIG. 38 described in this embodiment. The memorysystem 1 can similarly control the storage capacity of the RAM 22 whensuch a writing order is applied.

[6] Sixth Embodiment

Next, a memory system 1 according to the sixth embodiment will bedescribed. The present embodiment is a combination of the writing methoddescribed in the first embodiment and the writing order described in thefifth embodiment. Hereinafter, differences from the first to fifthembodiments will be described.

[6-1] Write Operation of Memory System 1

<Regarding Flow of Write Operation>

First, the write operation of the memory system 1 will be described. Inthe write operation of the memory system 1 according to this embodiment,in a semiconductor storage device 10 in which each block BLK includes aplurality of string units, the first and second program operationsdescribed in the first embodiment are executed in the order described inthe fifth embodiment. In the write operation to be described below, asin the first embodiment, coding conversion from a 4-4-3-4 code into a1-2-4-8 code is executed, for example.

The writing order in the first and second program operations in thisembodiment is shown in FIG. 46. FIG. 46 shows combinations of word linesWL and string units SU in a certain block BLK. FIG. 46 further shows aframe (background: white) corresponding to the first program operationand a frame (background: diagonal lines) corresponding to the secondprogram operation in each combination and displays, in each frame, thenumber representing the order for executing the operation. The solidarrows shown in FIG. 46 show that two page write data (lower and middlepage data) retained by a RAM 22 is cleared from the inside of acontroller 20 according to the operation at the start point of thearrow, and a memory region of the RAM 22 is released. Similarly, thedashed arrows show that two page write data (upper and top page data)retained by the RAM 22 is cleared from the inside of the controller 20according to the operation at the start point of the arrow, and thememory region of the RAM 22 is released.

As shown in FIG. 46, the writing order in various program operations inthis embodiment is similar to the writing order where the foggy programoperation and the fine program operation described in the fifthembodiment are replaced respectively with the first program operationand the second program operation described in the first embodiment. Insuch a program operation, of 4 pages data to be written to a memory cellcorresponding to a word line WL0 and a string unit SU0, the RAM 22retains the lower and middle page data until the first operation shownin FIG. 46 and retains the upper and top page data from the firstoperation shown in FIG. 46 to execution of the sixth operation. When thesixth operation is executed, the RAM 22 retains the upper and top pagedata of 4 pages data used in each of the second to fifth operations, forexample.

<Regarding Command Sequence>

Next, a command sequence in the above write operation will be describedusing FIG. 47. FIG. 47 shows a command sequence corresponding to theoperation described using FIG. 46 and shows an input/output signal I/Oinput to the semiconductor storage device 10.

As shown in FIG. 47, the controller 20 first transmits a first commandset in which the word line WL0 and each of the string units SU areselected to the semiconductor storage device 10 and makes thesemiconductor storage device 10 execute, in sequence, the first programoperation in which the word line WL0 and each of the string units SU areselected.

When the first program operation in which the word line WL0 is selectedis ended, the controller 20 transmits the first command set in which theword line WL1 and the string unit SU0 are selected to the semiconductorstorage device 10 and makes the semiconductor storage device 10 executethe first program operation in which the word line WL1 and the stringunit SU0 are selected.

When the first program operation in which the word line WL1 and thestring unit SU0 are selected is ended, the controller 20 transmits asecond command set in which the word line WL0 and the string unit SU0are selected to the semiconductor storage device 10 and makes thesemiconductor storage device 10 execute the second program operation inwhich the word line WL0 and the string unit SU0 are selected.

Although description of the subsequent command sequence is omitted, asshown in FIG. 47, the controller 20 appropriately selects a suitablecommand set and instructs the semiconductor storage device 10 to executevarious program operations.

[6-2] Effects of Sixth Embodiment

The memory system 1 according to the present embodiment can control thestorage capacity of the RAM 22 as compared with the fifth embodiment.Hereinafter, the details of the effects of sixth embodiment will bedescribed.

When the first and second program operations described in the firstembodiment are applied to a memory system in which each of the blocksBLK comprises the string units SU, as the writing order in the first andsecond program operations, the order shown in FIG. 48 is considered.

The writing order in a comparative example (second comparative example)of the sixth embodiment shown in FIG. 48 is similar to one in which thewriting orders in the foggy program operation and the fine programoperation in the first comparative example described using FIG. 43 arereplaced respectively with the first program operation and the secondprogram operation described in the first embodiment.

On the other hand, the writing order in this embodiment is similar toone in which the writing orders in the foggy program operation and thefine program operation in the fifth embodiment described using FIG. 38are replaced respectively with the first program operation and thesecond program operation.

From the above, in this embodiment and the second comparative example,the minimum required storage capacity of the RAM 22 is one shown in FIG.49. FIG. 49 shows an example of the configuration of the RAM 22 in eachof this embodiment and the second comparative example.

As shown in FIGS. 48 and 49, in the second comparative example, the RAM22 clears two page write data (lower and middle page data) of four pagewrite data, which is to be written to the memory cell corresponding tothe word line WL0 and the string unit SU0, according to the firstoperation and releases the memory region. The RAM 22 clears theremaining two page write data (upper and top page data) according to theninth operation and releases the memory region. Considering the factthat the RAM 22 retains the two page write data (upper and top pagedata) of four page write data in the second to eighth operations at thistime, the minimum required storage capacity of the RAM 22 in the secondcomparative example is 18 pages.

On the other hand, as shown in FIGS. 46 and 49, in the this embodiment,the RAM 22 clears two page write data (lower and middle page data) offour page write data, which is to be written to the memory cellcorresponding to the word line WL0 and the string unit SU0, according tothe first operation and releases the memory region. The RAM 22 clearsthe remaining two page write data (upper and top page data) according tothe sixth operation and releases the memory region. Considering the factthat the RAM 22 retains the two page write data (upper and top pagedata) in the second to fifth operations at this time, the minimumrequired storage capacity of the RAM 22 in this embodiment is 12 pages.

As described above, in the write operation in the memory system 1according to this embodiment, when the period until the second programoperation is executed is reduced, the period during which the RAM 22retains write data is reduced, and therefore, the consumption of the RAM22 can be controlled. Consequently, the memory system 1 according tothis embodiment can control the storage capacity of the RAM 22.

The writing order where the period until the fine program operation isexecuted is reduced may be the order shown in FIG. 50. The writing orderin a variation (second variation) of the sixth embodiment shown in FIG.50 is similar to one in which the writing orders in the foggy programoperation and the fine program operation in the first variationdescribed using FIG. 45 are replaced respectively with the first programoperation and the second program operation. The memory system 1 cansimilarly control the storage capacity of the RAM 22 when such a writingorder is applied.

[7] Seventh Embodiment

Next, a memory system 1 according to the seventh embodiment will bedescribed. The memory system 1 according to the present embodiment is avariation of the first embodiment, one page writing is executed in thefirst program operation, and one page IDL is executed in the secondprogram operation. Hereinafter, differences from the first to sixthembodiments will be described.

[7-1] Write Operation of Memory System 1

First, the write operation of the memory system 1 will be described. Inthe write operation of the memory system 1 according to this embodiment,the data processing described using FIG. 7 in the first embodiment isapplied to write data received from a host apparatus 30. Namely, in thisembodiment, a controller 20 executes coding conversion from a 4-4-3-4code into a 1-2-4-8 code, for example, with respect to the write datareceived from the host apparatus 30. According to this constitution, thememory system 1 can use IDL when 4-bit data is written while the writeoperation is divisionally performed twice. The memory system 1 executesone page writing in the first program operation and executes one pageIDL in the second program operation.

Specifically, in the first program operation, the memory system 1executes a one-page write operation based on 1 page data (lower pagedata) received by a semiconductor storage device 10 from the controller20. In the second program operation, the memory system 1 executes afour-page write operation based on 3 pages data (middle, upper, and toppage data) received by the semiconductor storage device 10 from thecontroller 20 and the 1 page data (lower page data) read by IDL.

Hereinafter, outlines of the first and second program operations in thememory system 1 of this embodiment will be described.

First, the outline of the first program operation will be describedusing FIG. 51. FIG. 51 shows a change in threshold distribution of amemory cell according to the first program operation. As shown in FIG.51, in the first program operation the semiconductor storage device 10executes a one-page write operation based on the lower page data inputfrom the controller 20.

A threshold voltage of a memory cell transistor MT before execution ofthe first program operation is distributed at an “ER” level. Thethreshold voltage at the “ER” level is less than a voltage V1, and as inthe “0” level described above, the threshold voltage at the “ER” levelcorresponds to an erase state of the memory cell transistor MT.

In the first program operation, a sequencer 14 uses a voltage VM1 as averify voltage. The voltage VM1 is used when “0” (“lower bit”) data iswritten and is not less than a voltage V1 and less than a voltage V9.

When the first program operation is executed, the threshold voltage ofthe memory cell transistor MT increases based on data to be written, andtwo threshold distributions are formed. An “M0” level shown in FIG. 51is formed by the memory cell transistors MT in which “1” data iswritten. An “M1” level is formed by the memory cell transistors MT inwhich “0” data is written.

The threshold voltage at the “M0” level is less than the voltage V1, andas in the “0” level and the “ER” level described above, the thresholdvoltage at the “M0” level corresponds to the erase state of the memorycell transistor MT. Namely, in the first program operation, the increasein threshold voltage is suppressed in the memory cell transistor MT inwhich the “1” data is written. A threshold voltage at the “M1” level isnot less than the voltage VM1 and less than the voltage V9. Thus, thevoltage VM1 used in verification in the first program operation is setsuch that the threshold voltage of the memory cell transistor MT havingpassed verification does not exceed a voltage V5.

Next, the outline of the second program operation will be describedusing FIG. 52. FIG. 52 shows a change in threshold distribution of thememory cell according to the second program operation. As shown in FIG.52, in the second program operation in this embodiment, thesemiconductor storage device 10 first executes internal data load (IDL).

In the IDL in this embodiment, the sense amplifier module 17 executesread operation using a voltage M1R. The voltage M1R is not less than thevoltage V1 and not more than the voltage VM1, and a sense amplifier partSA determines whether or not the threshold voltage of the memory celltransistor MT is less than the voltage M1R through the read operationusing the voltage M1R.

Consequently, the “1” data and “0” written by the first programoperation are restored in a latch circuit in a sense amplifier unit SAU.

The semiconductor storage device 10 executes a four-page write operationbased on the lower page data read by IDL and the middle page data, theupper page data, and the top page data input from the controller 20.

In the second program operation, as in the first embodiment, thesequencer 14 uses voltages V1, V2, V3, V4, V5, V6, V7, V8, V9, VA, VB,VC, VD, VE, and VF as verify voltages. When the second program operationis executed, the threshold voltage of the memory cell transistor MTincreases based on data to be written, and 16 threshold distributionsare formed from two levels. For example, threshold distributions at the“0” level, “1” level, “2” level, “3” level, “4” level, “5” level, “6”level, and “7” level are formed from a threshold distribution at the“M0” level. Threshold distributions at the “8” level, “9” level, “A”level, “B” level, “C” level, “D” level, “E” level, and “F” level areformed from a threshold distribution at the “M1” level.

[7-2] Effects of Seventh Embodiment

The memory system 1 according to this embodiment can improve reliabilityof written data. Hereinafter, the details of the effects of seventhembodiment will be described.

In the memory system 1 according to this embodiment, as in the firstembodiment, the controller 20 applies data processing including codeconversion to write data received from the host apparatus 30. In thisembodiment, in the first program operation the controller 20 transmits 1page data to the semiconductor storage device 10, and the semiconductorstorage device 10 writes 1 page data including the lower bit after codeconversion Then, in the second program operation, the controller 20transmits 3 pages data, including the middle, upper, and top bits aftercode conversion, to the semiconductor storage device 10, and thesemiconductor storage device 10 writes data of four pages in total tothe memory cell, based on the 1 page data read from the memory cell bythe semiconductor storage device 10 through IDL and including the lowerbit after code conversion and the 3 pages data received from thecontroller 20 and including the middle, upper, and top bits after codeconversion.

Consequently, the memory system 1 according to this embodiment canexecute write operation in which the 4 pages data is writtendivisionally twice, as in the first embodiment. In this embodiment,since the 1 page data is written in the first program operation, byvirtue of the subsequent second program operation, an influence of aninitial fall of a threshold voltage occurring due to data writingcorresponding to one bit and an influence of a parasitic capacitancebetween memory cells can be ignored in a threshold distribution to befinally obtained. Accordingly, in the memory system 1 according to thisembodiment, since a spread of the threshold distribution can besuppressed, the reliability of data can be improved.

In the memory system 1 according to this embodiment, in the secondprogram operation, data of the lower bit after code conversion writtenby the first program operation is restored by being read from the memorycell by IDL. Namely, the controller 20 can clear the 1 page data used inthe first program operation after transmitting the 1 page data to thesemiconductor storage device 10.

Consequently, the controller 20 can execute the above write operation ifthe storage capacity of the RAM 22 is at least seven pages. Namely, inthe memory system 1 according to this embodiment, since the storagecapacity of the RAM 22 can be controlled, the circuit area of thecontroller 20 can be controlled.

[8] Variations

The semiconductor storage device 10 according to the above embodimentincludes a first memory cell capable of storing n-bit data (n is anatural number not less than 4). When receiving first data, includingfirst and second bits <Lower/Middle> of the n-bit data, from acontroller 20, the semiconductor storage device 10 writes the receivedfirst data to the first memory cell. After receiving the first data,when the semiconductor storage device receives second data includingthird and fourth bits <Upper/Top> of the n-bit data, the semiconductorstorage device reads the first and second bits from the first memorycell <IDL, FIG. 10> and writes the n-bit data to the first memory cellbased on the read first and second bits and the received second data.

According to this constitution, the reliability of the read data can beimproved.

The configuration of the memory system 1 is not limited thereto, andvarious aspects can be taken. For example, as the memory system 1according to the above embodiment, the memory system 1 in which thesingle controller 20 and the single semiconductor storage device 10 arecombined has been described as one example; however, this invention isnot limited thereto. For example, with respect to the single controller20, a plurality of the semiconductor storage devices 10 may be provided.In this case, the storage capacity of the RAM 22 of the controller 20changes based on the number of the semiconductor storage devices 10. Forexample, in the case of the memory system 1 including the twosemiconductor storage devices 10, in order to execute the writeoperation in the first embodiment, the RAM 22 of the controller 20 isconfigured such that data of ten pages can be retained.

In the write operation described in the above embodiment, data retainedin the RAM 22 and the latch circuit of the sense amplifier unit SAU maynot be cleared after end of desired operation. For example, when theregion PG and the latch circuit are used in the subsequent operation,they are used by overwriting of data. Also in such case, the operationin the above embodiment can be achieved.

In the write operation described in the above embodiment, although thecase where data is transferred for each four pages from the hostapparatus 30 to the controller 20 has been described as an example, thisinvention is not limited thereto. For example, when the capacity of thebuffer memory 24 of the controller 20 is sufficient, a larger amount ofwrite data is retained, and the write operation may be executedsequentially. Although the case where the 4 pages data retained in thebuffer memory 24 is collectively transferred to the region PG of the RAM22 has been described as an example, this invention is not limitedthereto. For example, if 1 page data is accumulated in the buffer memory24, the data may be sequentially transferred to the region PG of the RAM22.

In the write operation described in the above embodiment, when thecontroller 20 executes coding conversion of write data, although thecase where the 4-4-3-4 code is applied as coding before conversion intothe 1-2-4-8 code has been described as an example, this invention is notlimited thereto. As coding used before coding conversion, all othercoding can be used.

In the fifth embodiment, although the case where the 4-4-3-4 code isapplied to the write data has been described as an example, thisinvention is not limited thereto. As coding used in the fifthembodiment, all other coding can be used.

In the sixth embodiment, although the case where the writing methoddescribed in the first embodiment and the writing order described in thefifth embodiment are combined has been described as an example, thisinvention is not limited thereto. For example, the writing methoddescribed in the second to fourth embodiments or seventh embodiment andthe writing order described in the fifth embodiment may be combined.

In the fifth and sixth embodiments, although each block BLK includes thefour string units SU, this invention is not limited thereto. Forexample, the number of the string units SU may be two, three, or five ormore. The determination value of the variable j in step S204 and thedetermination value of the variable i in step S206 used in thedescription in the flow chart of FIG. 35 are just examples, and thisinvention is not limited thereto. These determination values are setbased on the number of the string units SU corresponding to one blockBLK and the number of the word lines WL, for example.

For example, when the number of the string units SU is changed, thewriting order is one where with respect to the flow chart of FIG. 35,the number of the string units SU to be written in steps S200 and S207is changed, and the determination value of the variable j in step S204is changed to (the number of the string units SU−1).

In the write operation described in the above embodiment, although thecase where data of four bits is stored in the single memory cell hasbeen described as an example, this invention is not limited thereto. Forexample, data of three bits or five or more bits may be stored in thesingle memory cell. Also in such a case, the operation described in theabove embodiment can be achieved by selecting suitable coding.

The “connection in this specification means electrical connection anddoes not exclude the fact that another element is interposed in theconnection.

In the above embodiments, the memory cell array 11 may be configuredsuch that the memory cell transistor MT is three-dimensionally stackedabove a semiconductor substrate. Such a configuration is described in,for example, “Three dimensional stacked nonvolatile semiconductormemory” in Specification of U.S. patent application Publication Ser. No.12/407,403 filed on Mar. 19, 2009. In addition, such a configuration isdescribed in Specification of U.S. patent application Publication Ser.No. 12/406,524 filed on Mar. 18, 2009, titled “THREE DIMENSIONAL STACKEDNONVOLATILE SEMICONDUCTOR MEMORY”, Specification of U.S. patentapplication Publication Ser. No. 12/679,991 filed on Mar. 25, 2010,titled “NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OFMANUFACTURING THE SAME”, and Specification of U.S. patent applicationPublication Ser. No. 12/532,030 filed on Mar. 23, 2009, titled“SEMICONDUCTOR MEMORY AND METHOD FOR MANUFACTURING SAME”. The abovepatent applications are incorporated by reference herein in theirentirety.

In the above embodiments, the block BLK may not be the data erase unit.For example, other erase operations are described in Specification ofU.S. patent application Publication Ser. No. 13/235,389 filed on Sep.18, 2011, titled “NONVOLATILE SEMICONDUCTOR STORAGE DEVICE” andSpecification of U.S. patent application Publication Ser. No. 12/694,690filed on Jan. 27, 2010, titled “NON-VOLATILE SEMICONDUCTOR STORAGEDEVICE”. The above patent applications are incorporated by referenceherein in their entirety.

Regarding the details of tracking read in the above embodiments, it ispossible to apply the method described in Specification of U.S. patentapplication Publication Ser. No. 13/544,147 filed on Jul. 9, 2012,titled “SEMICONDUCTOR STORAGE DEVICE WHICH STORES MULTIVALUED DATA”. Thecontents of the above patent application are incorporated by referenceherein in their entirety.

In each of the above embodiments,

(1) in the read operation, the voltage applied to the word line selectedin the read operation at the “A” level is between 0 V and 0.55 V, forexample. The present invention is not limited thereto, and the voltagemay be any of between 0.1 V and 0.24 V, between 0.21 V and 0.31 V,between 0.31 V and 0.4 V, between 0.4 V and 0.5 V, and between 0.5 V and0.55 V.

The voltage applied to the word line selected in the read operation atthe “B” level is between 1.5 V and 2.3 V, for example. The presentinvention is not limited thereto, and the voltage may be any of between1.65 V and 1.8 V, between 1.8 V and 1.95 V, between 1.95 V and 2.1 V,and between 2.1 V and 2.3 V.

The voltage applied to the word line selected in the read operation atthe “C” level is between 3.0 V and 4.0 V, for example. The presentinvention is not limited thereto, and the voltage may be any of between3.0 V and 3.2 V, between 3.2 V and 3.4 V, between 3.4 V and 3.5 V,between 3.5 V and 3.6 V, and between 3.6 V and 4.0 V.

A time (tRead) of the read operation may be between 25 μs and 38 μs,between 38 μs and 70 μs, or between 70 μs and 80 μs, for example.

(2) The write operation includes the program operation and the verifyoperation, as described above. In the write operation, the voltage firstapplied to the word line selected in the program operation is between13.7 V and 14.3 V, for example. The present invention is not limitedthereto, and the voltage may be any of between 13.7 V and 14.0 V andbetween 14.0 V and 14.6 V, for example.

The voltage first applied to the selected word line when anodd-number-th word line is written and the voltage first applied to theselected word line when an even-number-th word line is written may bechanged.

When the program operation is of an ISPP (Incremental Step PulseProgram) type, a voltage of a step-up is approximately 0.5 V, forexample.

The voltage applied to a unselected word line may be between 6.0 V and7.3 V, for example. The present invention is not limited to this case,and the voltage may be between 7.3 V and 8.4 V, for example, or may benot more than 6.0 V.

A pass voltage to be applied may be changed depending on whether theunselected word line is an odd-number-th word line or an even-number-thword line.

The time (tProg) of the write operation may be between 1700 μs and 1800μs, between 1800 μs and 1900 μs, or between 1900 μs and 2000 μs, forexample.

(3) In the erase operation, a voltage first applied to a well providedat an upper portion of a semiconductor substrate and including thememory cell disposed above is between 12.0 V and 13.6 V, for example.The present invention is not limited thereto, and the voltage may be anyof between 13.6 V and 14.8 V, between 14.8 V and 19.0 V, between 19.0 Vand 19.8 V, and between 19.8 V and 21.0 V.

A time (tErase) of the erase operation may be between 3000 μs and 4000μs, between 4000 us and 5000 μs, or between 4000 μs and 9000 μs, forexample.

(4) As the structure of the memory cell, the memory cell has on asemiconductor substrate (a silicon substrate) a charge accumulationlayer disposed through a tunnel insulating film having a film thicknessof 4 to 10 nm. The charge accumulation layer may have a laminatestructure including an insulating film, such as SiN or SiON having afilm thickness of 2 to 3 nm and polysilicon having a film thickness of 3to 8 nm. Polysilicon may contain a metal such as Ru. An insulating filmis provided on the charge accumulation layer. The insulating film has,for example, a lower layer High-k film having a film thickness of 3 to10 nm, an upper layer High-k film having a film thickness of 3 to 10 nm,and a silicon oxide film having a film thickness of 4 to 10 nm. Examplesof a High-k film include HfO. The film thickness of the silicon oxidefilm may be increased so as to be larger than the film thickness of theHigh-k film. On the insulating film, a control electrode having a filmthickness of 30 to 70 nm is formed through a material having a filmthickness of 3 to 10 nm. Here, the material is a metal oxide film, suchas TaO, or a metal nitride film, such as TaN. As the control electrode,W or the like may be used.

An air gap may be formed between memory cells.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

What is claimed is:
 1. A memory system comprising: a nonvolatile memorydevice including a first word line, a second word line, first memorycells, second memory cells and a control unit, each of first memorycells and second memory cells being capable of storing four bit data,the four bit data corresponding to a first through a sixteenth thresholdvoltage ranges, the first word line being connected to gates of thefirst memory cells, the second word line being connected to gates of thesecond memory cells, the control unit being configured to perform anoperation to write first, second, third and fourth pages of data in thefirst memory cells by first write operation and second write operation,the control unit being configured to perform an operation to writefifth, sixth, seventh and eighth pages of data in the second memorycells by third write operation and fourth write operation; and acontroller configured to send a first command to the nonvolatile memorydevice, send a second command to the nonvolatile memory device, send athird command to the nonvolatile memory device and send a fourth commandto the nonvolatile memory device, the first command designating firstdata, second data and third data for writing to the first memory cells,the first data corresponding to the first page, the second datacorresponding to the second page, the third data corresponding to thethird page, the second command designating fourth data for writing tothe first memory cells, the third command designating fifth data, sixthdata and seventh data for writing to the second memory cells, the fifthdata corresponding to the fifth page, the sixth data corresponding tothe sixth page, the seventh data corresponding to the seventh page, thefourth command designating eighth data for writing to the second memorycells, the fourth data including ninth data corresponding to the fourthpage, the eighth data including tenth data corresponding to the eighthpage, wherein the control unit is configured to perform the first writeoperation to the first memory cells in response to the first command,the control unit is configured to perform, after performing the firstwrite operation to the first memory cells, the third write operation tothe second memory cells in response to the third command, the controlunit is configured to perform, after performing the third writeoperation to the second memory cells, the second write operation to thefirst memory cells in response to the second command, the control unitis configured to perform, after performing the second write operation tothe first memory cells, the fourth write operation to the second memorycells in response to the fourth command, in the first write operation tothe first memory cells, the control unit is configured to apply voltagesto the first word line based on the first data, the second data and thethird data to respectively set threshold voltages of the first memorycells in threshold voltages being in one of seventeenth, eighteenth,nineteenth, twentieth, twenty-first, twenty-second, twenty-third andtwenty-fourth threshold voltage ranges, in the second write operation tothe first memory cells, the control unit is configured to read eleventhdata from the first memory cells and apply voltages to the first wordline based on the read eleventh data and the fourth data so as to setthe threshold voltages of the first memory cells in first group of thefirst memory cells to threshold voltages that are in one of the firstand second threshold voltage ranges, set the threshold voltages of thefirst memory cells in second group of the first memory cells tothreshold voltages that are in one of the third and fourth thresholdvoltage ranges, set the threshold voltages of the first memory cells inthird group of the first memory cells to threshold voltages that are inone of the fifth and sixth threshold voltage ranges, set the thresholdvoltages of the first memory cells in fourth group of the first memorycells to threshold voltages that are in one of the seventh and eighththreshold voltage ranges, set the threshold voltages of the first memorycells in fifth group of the first memory cells to threshold voltagesthat are in one of the ninth and tenth threshold voltage ranges, set thethreshold voltages of the first memory cells in sixth group of the firstmemory cells to threshold voltages that are in one of the eleventh andtwelfth threshold voltage ranges, set the threshold voltages of thefirst memory cells in seventh group of the first memory cells tothreshold voltages that are in one of the thirteenth and fourteenththreshold voltage ranges and set the threshold voltages of the firstmemory cells in eight group of the first memory cells to thresholdvoltages that are in one of the fifteenth and sixteenth thresholdvoltage ranges, the threshold voltages of the first memory cells in thefirst group of the first memory cells being in the seventeenth thresholdvoltage range, the threshold voltages of the first memory cells in thesecond group of the first memory cells being in the eighteenth thresholdvoltage range, the threshold voltages of the first memory cells in thethird group of the first memory cells being in the nineteenth thresholdvoltage range, the threshold voltages of the first memory cells in thefourth group of the first memory cells being in the twentieth thresholdvoltage range, the threshold voltages of the first memory cells in thefifth group of the first memory cells being in the twenty-firstthreshold voltage range, the threshold voltages of the first memorycells in the sixth group of the first memory cells being in thetwenty-second threshold voltage range, the threshold voltages of thefirst memory cells in the seventh group of the first memory cells beingin the twenty-third threshold voltage range, the threshold voltages ofthe first memory cells in the eighth group of the first memory cellsbeing in the twenty-fourth threshold voltage range, in the third writeoperation to the second memory cells, the control unit is configured toapply voltages to the second word line based on the fifth data, thesixth data and the seventh data to set threshold voltages of the secondmemory cells in threshold voltages being in one of seventeenth,eighteenth, nineteenth, twentieth, twenty-first, twenty-second,twenty-third and twenty-fourth threshold voltage ranges, in the fourthwrite operation to the second memory cells, the control unit isconfigured to read twelfth data from the second memory cells and applyvoltages to the second word line based on the read twelfth data and theeighth data so as to set the threshold voltages of the second memorycells in first group of the second memory cells to threshold voltagesthat are in one of first and second threshold voltage ranges, set thethreshold voltages of the second memory cells in second group of thesecond memory cells to threshold voltages that are in one of third andfourth threshold voltage ranges, set the threshold voltages of thesecond memory cells in third group of the second memory cells tothreshold voltages that are in one of fifth and sixth threshold voltageranges, set the threshold voltages of the second memory cells in fourthgroup of the second memory cells to threshold voltages that are in oneof seventh and eighth threshold voltage ranges, set the thresholdvoltages of the second memory cells in fifth group of the second memorycells to threshold voltages that are in one of ninth and tenth thresholdvoltage ranges, set the threshold voltages of the second memory cells insixth group of the second memory cells to threshold voltages that are inone of eleventh and twelfth threshold voltage ranges, set the thresholdvoltages of the second memory cells in seventh group of the secondmemory cells to threshold voltages that are in one of thirteenth andfourteenth threshold voltage ranges and set the threshold voltages ofthe second memory cells in eight group of the second memory cells tothreshold voltages that are in one of fifteen and sixteenth thresholdvoltage ranges, the threshold voltages of the second memory cells in thefirst group of the second memory cells being in the seventeenththreshold voltage range, the threshold voltages of the second memorycells in the second group of the second memory cells being in theeighteenth threshold voltage range, the threshold voltages of the secondmemory cells in the third group of the second memory cells being in thenineteenth threshold voltage range, the threshold voltages of the secondmemory cells in the fourth group of the second memory cells being in thetwentieth threshold voltage range, the threshold voltages of the secondmemory cells in the fifth group of the second memory cells being in thetwenty-first threshold voltage range, the threshold voltages of thesecond memory cells in the sixth group of the second memory cells beingin the twenty-second threshold voltage range, the threshold voltages ofthe second memory cells in the seventh group of the second memory cellsbeing in the twenty-third threshold voltage range, the thresholdvoltages of the second memory cells in the eighth group of the secondmemory cells being in the twenty-fourth threshold voltage range, thecontroller, after performing the operation to write in the first memorycells, is configured to read the first data, second data, the third dataand the ninth data from the nonvolatile memory device and execute a dataerror checking and correcting (ECC) process based on the read firstdata, the read second data, the read third data and the read ninth data,the control unit, when reading out data from the first page of the firstmemory cells after performing the operation to write in the first memorycells, is configured to read out the data using a eighth voltage, theeighth voltage being a boundary voltage between the eighth thresholdvoltage range and the ninth threshold voltage range, and determine dataof the first page based on the read out data, the control unit, whenreading out data from the second page of the first memory cells afterperforming the operation to write in the first memory cells, isconfigured to read out the data using a fourth voltage and a twelfthvoltage, the fourth voltage being a boundary voltage between the fourththreshold voltage range and the fifth threshold voltage range, thetwelfth voltage being a boundary voltage between the twelfth thresholdvoltage range and the thirteenth threshold voltage range, and determinedata of the second page based on the read out data, the control unit,when reading out data from the third page of the first memory cellsafter performing the operation to write in the first memory cells, isconfigured to reads out the data using a second voltage, a sixthvoltage, a tenth voltage and a fourteenth voltage, the second voltagebeing a boundary voltage between the second threshold voltage range andthe third threshold voltage range, the sixth voltage being a boundaryvoltage between the sixth threshold voltage range and the sevenththreshold voltage range, the tenth voltage being a boundary voltagebetween the tenth threshold voltage range and the eleventh thresholdvoltage range, the fourteenth voltage being a boundary voltage betweenthe fourteenth threshold voltage range and the fifteenth thresholdvoltage range, and determine data of the third page based on the readout data, the control unit, when reading out data from the fourth pageof the first memory cells after performing the operation to write in thefirst memory cells, is configured to reads out using a first voltage, athird voltage, a fifth voltage, a seventh voltage, a ninth voltage, aeleventh voltage, a thirteenth voltage and a fifteenth voltage, thefirst voltage being a boundary voltage between the first thresholdvoltage range and the second threshold voltage range, the third voltagebeing a boundary voltage between the third threshold voltage range andthe fourth threshold voltage range, the fifth voltage being a boundaryvoltage between the fifth threshold voltage range and the sixththreshold voltage range, the seventh voltage being a boundary voltagebetween the seventh threshold voltage range and the eighth thresholdvoltage range, the ninth voltage being a boundary voltage between theninth threshold voltage range and the tenth threshold voltage range, theeleventh voltage being a boundary voltage between the eleventh thresholdvoltage range and the twelfth threshold voltage range, the thirteenthvoltage being a boundary voltage between the thirteenth thresholdvoltage range and the fourteenth threshold voltage range, the fifteenthvoltage being a boundary voltage between the fifteenth threshold voltagerange and the sixteenth threshold voltage range, and determine data ofthe fourth page based on the read out data, (n+1)-th threshold voltagerange is greater than n-th threshold voltage range, the n being aninteger larger than or equal to one and smaller than or equal tofifteen, and (k+1)-th threshold voltage range is greater than k-ththreshold voltage range, the k being an integer larger than or equal toseventeen and smaller than or equal to twenty-three.
 2. The memorysystem of claim 1, wherein the eleventh data includes data correspondingto the first page, data corresponding to the second page and datacorresponding to the third page, and the twelfth data includes datacorresponding to the fifth page, data corresponding to the sixth pageand data corresponding to the seven page.
 3. The memory system of claim2, wherein the control unit is configured to, in the second writeoperation to the first memory cells, read the eleventh data from thefirst memory cells using a seventeenth voltage, a eighteenth voltage, anineteenth voltage, a twentieth voltage, a twenty-first voltage, atwenty-second voltage and a twenty-third voltage, the seventeenthvoltage being a boundary voltage between the seventeenth thresholdvoltage range and the eighteenth threshold voltage range, the eighteenthvoltage being a boundary voltage between the eighteenth thresholdvoltage range and the nineteenth threshold voltage range, the nineteenthvoltage being a boundary voltage between the nineteenth thresholdvoltage range and the twentieth threshold voltage range, the twentiethvoltage being a boundary voltage between the twentieth threshold voltagerange and the twenty-first threshold voltage range, the twenty-firstvoltage being a boundary voltage between the twenty-first thresholdvoltage range and the twenty-second threshold voltage range, thetwenty-second voltage being a boundary voltage between the twenty-secondthreshold voltage range and the twenty-third threshold voltage range,the twenty-third voltage being a boundary voltage between thetwenty-third threshold voltage range and the twenty-fourth thresholdvoltage range.
 4. The memory system of claim 1, wherein the fourth dataincludes the third data and the ninth data, the eighth data includes theseventh data and the tenth data, the eleventh data includes datacorresponding to the first page and data corresponding to the secondpage, and the twelfth data includes data corresponding to the fifth pageand data corresponding to the sixth page.
 5. The memory system of claim4, wherein the control unit is configured to, in the second writeoperation to the first memory cells, read the eleventh data from thefirst memory cells using a seventeenth voltage, a eighteenth voltage anda nineteenth voltage, the seventeenth voltage being a boundary voltagebetween the eighteenth threshold voltage range and the nineteenththreshold voltage range, the eighteenth voltage being a boundary voltagebetween the twentieth threshold voltage range and the twenty-firstthreshold voltage range, the nineteenth voltage being a boundary voltagebetween the twenty-second threshold voltage range and the twenty-thirdthreshold voltage range.
 6. The memory system of claim 1, wherein thecontroller is configured to send fifth command to the nonvolatile memorydevice for reading the first data, the control unit is configured toread out data of the first page in response to the fifth command, thecontroller is configured to send sixth command to the nonvolatile memorydevice for reading the second data, the control unit is configured toread out data of the second page in response to the sixth command, thecontroller is configured to send seventh command to the nonvolatilememory device for reading the third data, the control unit is configuredto read out data of the third page in response to the seventh command,the controller is configured to send eighth command to the nonvolatilememory device for reading the ninth data, the control unit is configuredto read out data of the fourth page in response to the eight command,and the fifth, sixth, seventh and eighth command are after the secondcommand is sent.
 7. The memory system of claim 6, wherein the controlleris configured to convert the read first data, the read second data, theread third data and the read ninth data to generate eleventh data,twelfth data, thirteenth data and fourteenth data and execute the dataerror checking and correcting (ECC) process with respect to the eleventhdata, twelfth data, thirteenth data and fourteenth data, the eleventh,twelfth data, thirteenth data and fourteenth data are based on 4-4-3-4coding.
 8. The memory system of claim 1, wherein one of the first memorycells and one of the second memory cells are connected in series.
 9. Thememory system of claim 1, wherein the memory system is connectable to ahost device, and in response to a write command from the host device,the controller is configured to generate, based on data designated bythe write command, the first data, the second data, the third data andthe ninth data for writing to the nonvolatile memory device.
 10. Thememory system of claim 1, wherein the nonvolatile memory device includesfirst, second, third and fourth strings, each of the first to fourthstrings including the first memory cells and the second memory cells,the first word line is connected to gates of the first memory cells ofthe first string, gates of the first memory cells of the second string,gates of the first memory cells of the third string and gates of thefirst memory cells of the fourth string, the second word line isconnected to gates of the second memory cells of the first string, gatesof the second memory cells of the second string, gates of the secondmemory cells of the third string and gates of the second memory cells ofthe fourth string, and the controller is configured to: send the firstcommand for writing to the first memory cells of the first string; aftersending the first command for writing to the first memory cells of thefirst string, send the first command for writing to the first memorycells of the second string; after sending the first command for writingto the first memory cells of the second string, send the first commandfor writing to the first memory cells of the third string; after sendingthe first command for writing to the first memory cells of the thirdstring, send the first command for writing to the first memory cells ofthe fourth string; after sending the first command for writing to thefirst memory cells of the fourth string, send the third command forwriting to the second memory cells of the first string; after sendingthe third command for writing to the second memory cells of the firststring, send the third command for writing to the second memory cells ofthe second string; after sending the third command for writing to thesecond memory cells of the second string, send the third command forwriting to the second memory cells of the third string; after sendingthe third command for writing to the second memory cells of the thirdstring, send the third command for writing to the second memory cells ofthe fourth string; after sending the third command for writing to thesecond memory cells of the first string, send the second command forwriting to the first memory cells of the first string; after sending thesecond command for writing to the first memory cells of the firststring, send the second command for writing to the first memory cells ofthe second string; after sending the second command for writing to thefirst memory cells of the second string, send the second command forwriting to the first memory cells of the third string; after sending thesecond command for writing to the first memory cells of the thirdstring, send the second command for writing to the first memory cells ofthe fourth string; after sending the second command for writing to thefirst memory cells of the fourth string, send the fourth command forwriting to the second memory cells of the first string; after sendingthe fourth command for writing to the second memory cells of the firststring, send the fourth command for writing to the second memory cellsof the second string; after sending the fourth command for writing tothe first memory cells of the second string, send the fourth command forwriting to the second memory cells of the third string; and aftersending the fourth command for writing to the first memory cells of thethird string, send the fourth command for writing to the second memorycells of the fourth string.
 11. The memory system of claim 10, whereinthe controller is configured to: after sending the third command forwriting to the second memory cells of the first string, send the secondcommand for writing to the first memory cells of the first string; aftersending the third command for writing to the second memory cells of thesecond string, send the second command for writing to the first memorycells of the second string; after sending the third command for writingto the second memory cells of the third string, send the second commandfor writing to the first memory cells of the third string; after sendingthe third command for writing to the second memory cells of the fourthstring, send the second command for writing to the first memory cells ofthe fourth string.
 12. The memory system of claim 11, wherein thecontroller is configured to: after sending the second command forwriting to the first memory cells of the first string, send the thirdcommand for writing to the second memory cells of the second string;after sending the second command for writing to the first memory cellsof the second string, send the third command for writing to the secondmemory cells of the third string; and after sending the second commandfor writing to the first memory cells of the third string, send thethird command for writing to the second memory cells of the fourthstring.
 13. The memory system of claim 10, wherein each of the firstthrough fourth strings has a select transistor, the nonvolatile memorydevice includes a first select gate line electrically connected to agate of the select transistor of the first string, a second select gateline electrically connected to a gate of the select transistor of thesecond string, a third select gate line electrically connected to a gateof the select transistor of the third string and a fourth select gateline electrically connected to a gate of the select transistor of thefourth string.
 14. The memory system of claim 1, wherein the firstthreshold voltage range corresponds to an erase state of each of firstmemory cells and second memory cells, and the seventeenth thresholdvoltage range corresponds to the erase state of each of first memorycells and second memory cells.
 15. The memory system of claim 14,wherein, in the second write operation to the first memory cells, thethreshold voltages of the first memory cells in the first group of thefirst memory cells is maintained to the seventeen threshold voltagerange or sifted to the second threshold voltage range.
 16. The memorysystem of claim 14, wherein, in the second write operation to the firstmemory cells, the threshold voltages of the first memory cells in thesecond group of the first memory cells is sifted to the third thresholdvoltage range or fourth threshold voltage range from the eighteenththreshold voltage range.
 17. The memory system of claim 14, wherein, inthe second write operation to the first memory cells, the thresholdvoltages of the first memory cells in the third group of the firstmemory cells is sifted to the fifth threshold voltage range or sixththreshold voltage range from the nineteenth threshold voltage range. 18.The memory system of claim 14, wherein, in the second write operation tothe first memory cells, the threshold voltages of the first memory cellsin the fourth group of the first memory cells is sifted to the sevenththreshold voltage range or eight threshold voltage range from thetwentieth threshold voltage range.
 19. The memory system of claim 14,wherein, in the second write operation to the first memory cells, thethreshold voltages of the first memory cells in the fifth group of thefirst memory cells is sifted to the ninth threshold voltage range ortenth threshold voltage range from the twenty-first threshold voltagerange.
 20. The memory system of claim 14, wherein, in the second writeoperation to the first memory cells, the threshold voltages of the firstmemory cells in the sixth group of the first memory cells is sifted tothe eleventh threshold voltage range or twelfth threshold voltage rangefrom the twenty-second threshold voltage range.